Photoluminescence excitation and de-excitation mechanism of erbium doped silicon monoxide

1996 ◽  
Vol 32 (6) ◽  
pp. 589
Author(s):  
S.W. Roberts ◽  
G.J. Parker
Keyword(s):  
Silicon Monoxide ◽  
Photoluminescence Excitation ◽  
Excitation Mechanism ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals The photoluminescence of erbium-doped silicon monoxide

1996 ◽  
Vol 6 (1-2) ◽  
pp. 99-102 ◽  
Author(s):  
S.W. Roberts ◽  
G.J. Parker ◽  
M. Hempstead
Keyword(s):  
Silicon Monoxide ◽  
Erbium Doped ◽  
Doped Silicon

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

2000 ◽  
Vol 76 (15) ◽  
pp. 1999-2001 ◽  
Author(s):  
Jung H. Shin ◽  
Se-young Seo ◽  
Sangsig Kim ◽  
S. G. Bishop
Keyword(s):  
Silicon Oxide ◽  
Photoluminescence Excitation ◽  
Erbium Doped ◽  
Doped Silicon

scholarly journals Nanocluster sensitized erbium-doped silicon monoxide waveguides

2006 ◽  
Vol 14 (25) ◽  
pp. 12151 ◽  
Author(s):  
T. J. Clement ◽  
R. G. DeCorby ◽  
N. Ponnampalam ◽  
T. W. Allen ◽  
A. Hryciw ◽  
...  
Keyword(s):  
Silicon Monoxide ◽  
Erbium Doped ◽  
Doped Silicon

Evaluation of erbium‐doped silicon for optoelectronic applications

1991 ◽  
Vol 70 (6) ◽  
pp. 3223-3228 ◽  
Author(s):  
Y. H. Xie ◽  
E. A. Fitzgerald ◽  
Y. J. Mii
Keyword(s):  
Erbium Doped ◽  
Doped Silicon ◽  
Optoelectronic Applications

Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Achim DÖrnen ◽  
Klaus Pressel ◽  
Christoph Hiller ◽  
Dieter Haase ◽  
JÜrgen Weber ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Excitation ◽  
Excitation Mechanism ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTWe investigate the excitation mechanism of the characteristic 4f luminescence 3H5 →3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Stimulated emission in erbium-doped silicon structures under optical pumping

2001 ◽  
Vol 81 (1-3) ◽  
pp. 52-55 ◽  
Author(s):  
M.S. Bresler ◽  
O.B. Gusev ◽  
E.I. Terukov ◽  
I.N. Yassievich ◽  
B.P. Zakharchenya ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Stimulated Emission ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Silicon Structures

Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2MOS-LED

2011 ◽  
Vol 32 (8) ◽  
pp. 749-754
Author(s):  
刘海旭 LIU Hai-xu ◽  
孙甲明 SUN Jia-ming ◽  
孟凡杰 MENG Fan-jie ◽  
侯琼琼 HOU Qiong-qiong
Keyword(s):  
Erbium Doped ◽  
Doped Silicon ◽  
Electroluminescence Property
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