Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon

1996 ◽  
Author(s):  
Mikhail S. Bresler ◽  
Oleg B. Gusev ◽  
V. K. Kudoyarova ◽  
A. N. Kuznetsov ◽  
Petr E. Pak ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Room Temperature Photoluminescence ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon

1998 ◽  
Vol 80 (1-4) ◽  
pp. 335-338 ◽  
Author(s):  
O.B Gusev ◽  
M.S Bresler ◽  
E.I Terukov ◽  
K.D Tsendin ◽  
I.N Yassievich
Keyword(s):  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon

1997 ◽  
Vol 70 (2) ◽  
pp. 240-242 ◽  
Author(s):  
O. B. Gusev ◽  
A. N. Kuznetsov ◽  
E. I. Terukov ◽  
M. S. Bresler, ◽  
V. Kh. Kudoyarova ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium

1998 ◽  
Vol 227-230 ◽  
pp. 488-492 ◽  
Author(s):  
E.I Terukov ◽  
V.Kh Kudoyarova ◽  
A.N Kuznetsov ◽  
W Fuhs ◽  
G Weiser ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Room Temperature Photoluminescence ◽  
Amorphous Hydrogenated Silicon

Enhanced Surface Diffusion in Low-temperature a-Si:H Processing

2004 ◽  
Vol 808 ◽  
Author(s):  
George T. Dalakos ◽  
Joel L. Plawsky ◽  
Peter D. Persans
Keyword(s):  
Surface Roughness ◽  
Surface Diffusion ◽  
Room Temperature ◽  
Cathodic Deposition ◽  
Hydrogenated Silicon ◽  
Surface Diffusivity ◽  
Amorphous Hydrogenated Silicon ◽  
Anodic Deposition ◽  
Enhanced Surface ◽  
Global Parameters

ABSTRACTGlow discharge amorphous hydrogenated silicon (a-Si:H) prepared at near room temperature typically results in an inhomogeneous morphology that is undesirable for a number of thin film applications. The most commonly observed features of this include columnar morphology and surface roughness. This usually results from anodic deposition, where substrates are placed on the grounded electrode. We have discovered that placing substrates on the RF-powered electrode (referred to as cathodic deposition) offers a much wider processing range for homogenous growth than anodic growth. We have also found that the magnitude of the surface roughness and the bulk void fraction of both anodic and cathodic a-Si:H thin films processed at low-temperatures is proportional to ∼D/F, where D is the surface diffusivity and F, the adatom flux, though anodic and cathodic deposition affect these global parameters differently. Surface processes unique to cathodic deposition can enhance adatom surface diffusion, while diffusion during anodic deposition is fixed and cannot attain homogeneous growth at high adatom fluxes. Processing a-Si:H on the cathode, associated with enhanced adatom surface diffusion, allows for homogeneous growth even at high deposition rates that has benefits for a number of applications.

Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

2003 ◽  
Vol 37 (7) ◽  
pp. 766-768
Author(s):  
A. G. Kazanskii ◽  
H. Mell ◽  
E. I. Terukov ◽  
P. A. Forsh
Keyword(s):  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Conductivity Change ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

1995 ◽  
Vol 67 (24) ◽  
pp. 3599-3601 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
V. Kh. Kudoyarova ◽  
A. N. Kuznetsov ◽  
P. E. Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Room Temperature Photoluminescence ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys

1994 ◽  
Vol 336 ◽  
Author(s):  
Leandro R. Tessler ◽  
Ionel Solomon
Keyword(s):  
Room Temperature ◽  
Urbach Energy ◽  
Photoluminescence Intensity ◽  
Tetrahedral Coordination ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous ◽  
Carbon Concentrations ◽  
Phonon Model

ABSTRACTWe report a photoluminescence study on amorphous hydrogenated silicon carbon (a-Si1-xCx:H) alloys with carbon concentration in the range O < x < 0.5, prepared by PECVD in the “low-power” regime, that preserves the tetrahedral coordination of the carbon atoms. These samples have optical gaps higher than conventional “high power” alloys with the same carbon content. For carbon concentrations below x = 0.2 the photoluminescence behaves essentially as in pure a-Si:H with increased gap, Urbach energy and DOS. For higher carbon concentrations there is a change in the recombination process, that we attribute to a change in the dominating diffusion process of the photogenerated carriers. The integrated photoluminescence intensity for carbon-rich samples is very weakly dependent on the temperature, and at room temperature it approaches that of pure a-Si:H at 77K. For all samples, the photoluminescence bandwidth can be well described by a zero-phonon model.

Microstructure and Dangling Bond Defects in Amorphous Hydrogenated Silicon Deposited Near Room Temperature

1992 ◽  
Vol 258 ◽  
Author(s):  
Man Ken Cheung ◽  
Mark A. Petrich
Keyword(s):  
Room Temperature ◽  
Dangling Bond ◽  
Optimum Conditions ◽  
Band Tail ◽  
Hydrogenated Silicon ◽  
Photothermal Deflection Spectroscopy ◽  
Amorphous Hydrogenated Silicon ◽  
Photothermal Deflection ◽  
Substrate Temperatures ◽  
Absorption Measurements

ABSTRACTThe microstructure of high-density amorphous hydrogenated silicon (a-S.i:H) films deposited at 50°C substrate temperature was revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies to be similar to that of “device-quality” a-Si:H films deposited at standard “optimum” conditions. However, optical absorption measurements of these low microstructure 50°C films with photothermal deflection spectroscopy indicate that they have higher densities of gap state defects and localized band tail states than “device-quality” films deposited at standard substrate temperatures. The correlation between the amount of microstructure and electronic properties is not unique. A low amount of microstructure is a necessary, but not sufficient, requirement for high electronic quality a-Si:H films.

Sign in / Sign up

Export Citation Format

Share Document