Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation

1996 ◽  
Vol 69 (25) ◽  
pp. 3896-3898 ◽  
Author(s):  
Shuji Komuro ◽  
Shinya Maruyama ◽  
Takitaro Morikawa ◽  
Xinwei Zhao ◽  
Hideo Isshiki ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Room Temperature Luminescence

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

2002 ◽  
Vol 14 (3) ◽  
pp. L63-L69 ◽  
Author(s):  
Fei Xu ◽  
Zhisong Xiao ◽  
Guoan Cheng ◽  
Zhongzhen Yi ◽  
Tonghe Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Ion Source ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Doped Silicon

Luminescent Erbium‐Doped Silicon Thin Films for Advanced Anti‐Counterfeit Labels

2021 ◽  
Vol 33 (16) ◽  
pp. 2005886
Author(s):  
Artem O. Larin ◽  
Liliia N. Dvoretckaia ◽  
Alexey M. Mozharov ◽  
Ivan S. Mukhin ◽  
Artem B. Cherepakhin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Doped Silicon

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Influence of nanostructure size on the luminescence behavior of silicon nanoparticle thin films

1997 ◽  
Vol 12 (12) ◽  
pp. 3386-3392 ◽  
Author(s):  
A. A. Seraphin ◽  
E. Werwa ◽  
K. D. Kolenbrander
Keyword(s):  
Thin Films ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Silicon Nanoparticles ◽  
Excitation Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Intensity ◽  
High Excitation ◽  
Silicon Thin Films ◽  
Processing Techniques

We demonstrate the effect of particle size and quantum confinement on the luminescence properties of nanoscale silicon thin films. Thin films of agglomerated silicon nanoparticles are synthesized using pulsed laser ablation supersonic expansion. Following deposition, standard semiconductor processing techniques are employed to reduce the nanoparticle size. Films are oxidized both in air and chemically to reduce the silicon core dimensions, resulting in a shift of the luminescence emission peak to shorter wavelengths. Removal of the oxide using hydrofluoric acid (HF) results in further blueshifting of the luminescence, as does subsequent reoxidation in air and using nitric acid. The luminescence properties of samples are also studied as a function of excitation intensity. For room temperature excitation with a pulsed 355 nm source, a saturation of the photoluminescence intensity at high excitation intensity is observed, along with a blueshift of the peak PL wavelength. This behavior is found to persist at reduced temperature. A saturation of PL intensity, but no blueshift, is observed for high excitation intensity using a cw 488 nm source at room temperature. At reduced temperatures, no saturation of emission intensity occurs for high intensity 488 nm cw excitation. Both the irreversible shifting of the peak PL wavelength with size reducing treatments and the PL behavior at high excitation intensities indicate that quantum confinement determines the luminescence wavelength.

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

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