Kink-like effect in long n-channel twin-gate fully-depleted SOI MOSFETs

D. De Ceuster; D. Flandre

doi:10.1049/el:19940992

Back-illuminated, fully-depleted CCD image sensors for use in optical and near-IR astronomy

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/s0168-9002(99)01224-3 ◽

2000 ◽

Vol 442 (1-3) ◽

pp. 216-222 ◽

Cited By ~ 22

Author(s):

D.E Groom ◽

S.E Holland ◽

M.E Levi ◽

N.P Palaio ◽

S Perlmutter ◽

...

Keyword(s):

Image Sensors ◽

Fully Depleted ◽

Near Ir ◽

Ccd Image ◽

Ir Astronomy ◽

Back Illuminated

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A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

2008 4th International Conference on Wireless Communications, Networking and Mobile Computing ◽

10.1109/wicom.2008.460 ◽

2008 ◽

Author(s):

Xiu-Long Wu ◽

Jun-Ning Chen ◽

Dao-Ming Ke

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽

10.3390/electronics10131585 ◽

2021 ◽

Vol 10 (13) ◽

pp. 1585

Author(s):

Hanbin Wang ◽

Jinshun Bi ◽

Mengxin Liu ◽

Tingting Han

Keyword(s):

Gate Voltage ◽

Computer Aided Design ◽

Silicon On Insulator ◽

Fully Depleted ◽

Gate Structure ◽

Different Temperatures ◽

Dual Gate ◽

Sensitivity Changes ◽

Increasing Temperature ◽

Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

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