A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

2002 ◽  
Vol 49 (1) ◽  
pp. 82-88 ◽  
Author(s):  
F.J.G. Sanchez ◽  
A. Ortiz-Conde ◽  
A. Cerdeira ◽  
M. Estrada ◽  
D. Flandre ◽  
...  
Keyword(s):  
Series Resistance ◽  
Fully Depleted ◽  
Mobility Degradation

scholarly journals Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Comparative Analysis ◽  
Low Temperature ◽  
Room Temperature ◽  
Series Resistance ◽  
Function Analysis ◽  
Saturation Regime ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Recessed Channel ◽  
First Time

The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the sameW/Lratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDSandIDS-VGS) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using aY-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of theY-function analysis and show that a new function calledZcan be used to extract the series resistance in the saturation regime.

scholarly journals Extraction of Series Resistance and Mobility Degradation in MOSFETs Using Iterative Method

2020 ◽  
Vol 5 (1) ◽  
pp. 21-27
Author(s):  
Noureddine Maouhoub ◽  
Khalid Rais
Keyword(s):  
Iterative Method ◽  
Series Resistance ◽  
Exponential Model ◽  
Short Channel ◽  
Attenuation Parameter ◽  
Low Field ◽  
Mobility Degradation ◽  
Strong Inversion ◽  
Roughness Amplitude ◽  
Good Agreement

Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion.  

Extracting Mobility Degradation and Total Series Resistance of Cylindrical Gate-All-Around Silicon Nanowire Field-Effect Transistors

2009 ◽  
Vol 30 (6) ◽  
pp. 665-667 ◽  
Author(s):  
Luryi Choi ◽  
Byoung Hak Hong ◽  
Young Chai Jung ◽  
Keun Hwi Cho ◽  
Kyoung Hwan Yeo ◽  
...  
Keyword(s):  
Field Effect ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Mobility Degradation
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