Erratum: High-pressure thermal oxidation of gallium arsenide at 250°C

1988 ◽  
Vol 24 (2) ◽  
pp. 134
Author(s):  
K.N. Bhat ◽  
N. Basu
Keyword(s):  
High Pressure ◽  
Gallium Arsenide ◽  
Thermal Oxidation

High-pressure thermal oxidation of gallium arsenide at 250°C

1987 ◽  
Vol 23 (24) ◽  
pp. 1329 ◽  
Author(s):  
K.N. Bhat ◽  
N. Basu
Keyword(s):  
High Pressure ◽  
Gallium Arsenide ◽  
Thermal Oxidation

High-pressure phase transition and phase diagram of gallium arsenide

1991 ◽  
Vol 44 (9) ◽  
pp. 4214-4234 ◽  
Author(s):  
J. M. Besson ◽  
J. P. Itié ◽  
A. Polian ◽  
G. Weill ◽  
J. L. Mansot ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Diagram ◽  
High Pressure ◽  
Gallium Arsenide ◽  
High Pressure Phase ◽  
High Pressure Phase Transition ◽  
Pressure Phase

N+doping of gallium arsenide by rapid thermal oxidation of a silicon cap

1990 ◽  
Vol 57 (16) ◽  
pp. 1681-1683 ◽  
Author(s):  
D. K. Sadana ◽  
J. P. de Souza ◽  
F. Cardone
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
N Doping

Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

1990 ◽  
Vol 204 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
O.J. Glembocki ◽  
V.M. Bermudez
Keyword(s):  
Raman Spectroscopy ◽  
Gallium Arsenide ◽  
High Temperature ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Atomic Oxygen ◽  
Oxidation States ◽  
Translational Energy ◽  
Oxidation Processes ◽  
As Species

ABSTRACTOxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

Joint effect of chemostimulator (Sb2O3, Bi2O3, MnO2) compositions with an inert component (Al2O3) on gallium arsenide thermal oxidation

2007 ◽  
Vol 414 (2) ◽  
pp. 152-154 ◽  
Author(s):  
P. K. Penskoi ◽  
V. F. Kostryukov ◽  
V. R. Pshestanchik ◽  
I. Ya. Mittova
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Joint Effect ◽  
Inert Component

Redistribution of arsenic in silicon during high pressure thermal oxidation

1987 ◽  
Vol 50 (11) ◽  
pp. 688-690 ◽  
Author(s):  
Seong S. Choi ◽  
M. Z. Numan ◽  
W. K. Chu ◽  
J. K. Srivastava ◽  
E. A. Irene
Keyword(s):  
High Pressure ◽  
Thermal Oxidation

Gallium arsenide antireflection layer via direct wet thermal oxidation

2015 ◽  
Vol 51 (7) ◽  
pp. 575-577 ◽  
Author(s):  
J. Li ◽  
Y. Tian ◽  
D.C. Hall
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation

High‐pressure thermal oxidation of InP in steam

1988 ◽  
Vol 63 (2) ◽  
pp. 506-509 ◽  
Author(s):  
R. G. Gann ◽  
K. M. Geib ◽  
C. W. Wilmsen ◽  
J. Costello ◽  
G. Hrychowain ◽  
...  
Keyword(s):  
High Pressure ◽  
Thermal Oxidation
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