Gallium arsenide antireflection layer via direct wet thermal oxidation

2015 ◽  
Vol 51 (7) ◽  
pp. 575-577 ◽  
Author(s):  
J. Li ◽  
Y. Tian ◽  
D.C. Hall
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation

N+doping of gallium arsenide by rapid thermal oxidation of a silicon cap

1990 ◽  
Vol 57 (16) ◽  
pp. 1681-1683 ◽  
Author(s):  
D. K. Sadana ◽  
J. P. de Souza ◽  
F. Cardone
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
N Doping

Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

1990 ◽  
Vol 204 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
O.J. Glembocki ◽  
V.M. Bermudez
Keyword(s):  
Raman Spectroscopy ◽  
Gallium Arsenide ◽  
High Temperature ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Atomic Oxygen ◽  
Oxidation States ◽  
Translational Energy ◽  
Oxidation Processes ◽  
As Species

ABSTRACTOxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

Joint effect of chemostimulator (Sb2O3, Bi2O3, MnO2) compositions with an inert component (Al2O3) on gallium arsenide thermal oxidation

2007 ◽  
Vol 414 (2) ◽  
pp. 152-154 ◽  
Author(s):  
P. K. Penskoi ◽  
V. F. Kostryukov ◽  
V. R. Pshestanchik ◽  
I. Ya. Mittova
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Joint Effect ◽  
Inert Component

High-pressure thermal oxidation of gallium arsenide at 250°C

1987 ◽  
Vol 23 (24) ◽  
pp. 1329 ◽  
Author(s):  
K.N. Bhat ◽  
N. Basu
Keyword(s):  
High Pressure ◽  
Gallium Arsenide ◽  
Thermal Oxidation

Thermal oxidation of gallium arsenide with the surface modified by transition metal oxides

2010 ◽  
Vol 36 (2) ◽  
pp. 238-246 ◽  
Author(s):  
E. V. Tomina ◽  
I. Ya. Mittova ◽  
A. S. Sukhochev ◽  
B. V. Sladkopevtsev
Keyword(s):  
Gallium Arsenide ◽  
Transition Metal ◽  
Metal Oxides ◽  
Thermal Oxidation ◽  
Transition Metal Oxides ◽  
Surface Modified

Thermal oxidation of gallium arsenide

1989 ◽  
Vol 7 (1) ◽  
pp. 49-54 ◽  
Author(s):  
Othon R. Monteiro ◽  
James W. Evans
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation
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