Changes in the thermal oxidation of gallium arsenide induced by ion implantation

1979 ◽  
Vol 15 (2) ◽  
pp. 51 ◽  
Author(s):  
D.N. Butcher ◽  
B.J. Sealy
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Thermal Oxidation

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

2019 ◽  
Vol 174 (7-8) ◽  
pp. 636-646
Author(s):  
Ajay Yadav ◽  
S. K. Dubey ◽  
V. Bambole ◽  
R. L. Dubey ◽  
I. Sulania ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Negative Ion

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

1976 ◽  
Vol 29 (11) ◽  
pp. 698-699 ◽  
Author(s):  
C. O. Bozler ◽  
J. P. Donnelly ◽  
W. T. Lindley ◽  
R. A. Reynolds
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Implantation Damage

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Formation processes of zinc-oxide nanoparticles by ion implantation combined with thermal oxidation

2006 ◽  
Vol 287 (1) ◽  
pp. 2-6 ◽  
Author(s):  
H. Amekura ◽  
N. Umeda ◽  
M. Yoshitake ◽  
K. Kono ◽  
N. Kishimoto ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Formation Processes

Shallow Ion Implantation in Gallium Arsenide Mesfet Technology

1991 ◽  
Vol 240 ◽  
Author(s):  
J. P. de Souza ◽  
D. K. Sadana
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Electrical Activation ◽  
Low Doses ◽  
Layer Formation ◽  
Remarkable Improvement ◽  
Maximum Improvement ◽  
Activation Behavior ◽  
State Of Art ◽  
Ic Technology

ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.

1993 ◽  
Vol 316 ◽  
Author(s):  
Craig Jasper ◽  
Scott Klingbeil ◽  
K.S. Jones ◽  
H.G. Robinson
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Threshold Voltage ◽  
Defect Formation ◽  
Mass Resolution ◽  
Resolving Power ◽  
Cross Contamination ◽  
Mass Resolving Power ◽  
Aperture Opening

ABSTRACTControl of threshold voltage during gallium arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) processing is critical. Channel formation typically is done using ion implantation of 29Si+ from a SiF4 source. The use of Si+ presents a variety of potential cross-contamination problems. 28Si+ and 30Si+ beams can become contaminated with 28N2+, 28CO+, and 30NO+. While 29Si+ is relatively pure, the abundance of 29Si+ in the mass spectrum is 4.67%, thus reducing the potential beam current. This study investigates the effects of varying the mass resolving power of an Eaton 6200AV implanter on the electrical parameters and defect formation. The mass resolving power was adjusted by changing the mean path size through the slit of the aperture opening and magnetic separator current. Electrical device characterization measured a small shift in saturated source-drain current (Idss) and break down voltage, while threshold voltage shifts of approximately 80 mV were observed, with the various mass resolution powers. Transmission Electron Microscopy (TEM) showed that there is minimal change in the extended defect density with changes in isotope and aperture opening. Secondary Ion Mass Spectrometry (SIMS) measured the amount of cross contamination and these results correlated well with the observed changes in device electrical properties.

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