Transport Properties in (Ga,Mn)N Nanowire Field-Effect Transistors

2007 ◽  
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2017 ◽  
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U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.


2008 ◽  
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pp. 1567-1574 ◽  
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Christine Videlot-Ackermann ◽  
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Jorg Ackermann ◽  
Sébastien Nénon ◽  
...  

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Vol 7 (1) ◽  
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Author(s):  
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Lucia Sorba ◽  
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2007 ◽  
Vol 449 (1-3) ◽  
pp. 160-164 ◽  
Author(s):  
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...  

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