Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)
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Growth and characterization of large diameter semi-insulating 6H silicon carbide substrates

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902528 ◽

2002 ◽

Author(s):

M. Yoganathan ◽

A. Gupta ◽

F. Long ◽

J.C. Burton ◽

N. Byrd ◽

...

Keyword(s):

Silicon Carbide ◽

Large Diameter

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Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902544 ◽

2002 ◽

Cited By ~ 6

Author(s):

B.M. Green ◽

Hyungtak Kim ◽

V. Tilak ◽

J.R. Shealy ◽

J.A. Smart ◽

...

Keyword(s):

Large Signal ◽

Signal Model

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Current-injection characterization of breakdown in AlGaN/GaN MODFETs

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902522 ◽

2002 ◽

Author(s):

E. Alekseev ◽

P. Nguyen-Tan ◽

D. Pavlidis ◽

M. Micovic ◽

D. Wong ◽

...

Keyword(s):

Current Injection

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Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO/sub 2/

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902531 ◽

2002 ◽

Author(s):

I. Perez ◽

J. Elam ◽

S. George ◽

M. Groner ◽

J.T. Torvik ◽

...

Keyword(s):

Atomic Layer ◽

Mos Capacitors ◽

Fabrication And Characterization

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Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902533 ◽

2002 ◽

Cited By ~ 1

Author(s):

Luo Yuan ◽

M.R. Melloch ◽

J.A. Cooper ◽

K.J. Webb

Keyword(s):

Silicon Carbide ◽

Millimeter Wave ◽

High Power ◽

Wave Generation ◽

High Power Microwave ◽

Power Microwave

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A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902537 ◽

2002 ◽

Author(s):

B.P. Gila ◽

K.N. Lee ◽

W. Johnson ◽

F. Ren ◽

C.R. Abernathy ◽

...

Keyword(s):

Gadolinium Oxide

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A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902530 ◽

2002 ◽

Cited By ~ 8

Author(s):

R.C. Clarke ◽

A.W. Morse ◽

P. Esker ◽

W.R. Curtice

Keyword(s):

Continuous Wave ◽

L Band

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Diamond power FET concept

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902548 ◽

2002 ◽

Cited By ~ 4

Author(s):

A. Aleksov ◽

A. Denisenko ◽

N. Kab ◽

W. Ebert ◽

E. Kohn

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Characterization of ScN heterojunctions

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902520 ◽

2002 ◽

Author(s):

F. Perjeru ◽

X. Bai ◽

M.I. Ortiz-Libreros ◽

M.E. Kordesch

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High-speed switching performance and buck converter operation of 4H-SiC diodes

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) ◽

10.1109/cornel.2000.902521 ◽

2002 ◽

Cited By ~ 4

Author(s):

M. Trivedi ◽

K. Shenai ◽

P.G. Neudeck

Keyword(s):

High Speed ◽

Buck Converter ◽

Switching Performance ◽

High Speed Switching

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Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Growth and characterization of large diameter semi-insulating 6H silicon carbide substrates

Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates

Current-injection characterization of breakdown in AlGaN/GaN MODFETs

Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO/sub 2/

Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation

A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT

Diamond power FET concept

Characterization of ScN heterojunctions

High-speed switching performance and buck converter operation of 4H-SiC diodes

Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)
Latest Publications