Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

2014 ◽  
Vol 1 (4) ◽  
pp. 446-451 ◽  
Author(s):  
Pei-Yang Gu ◽  
Junkuo Gao ◽  
Cai-Jian Lu ◽  
Wangqiao Chen ◽  
Chengyuan Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Memory Performance ◽  
Memory Devices ◽  
Switching Threshold ◽  
Switching Threshold Voltage

Memory devices based on 4N4OPz exhibit excellent ternary memory behavior with high ON2/ON1/OFF current ratios and low switching threshold voltage.

Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

2016 ◽  
Vol 618 ◽  
pp. 90-94 ◽  
Author(s):  
Guan-Hung Shen ◽  
Andrew Ronaldi Tandio ◽  
Mei-Yu Lin ◽  
Gao-Feng Lin ◽  
Kai-Huang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Threshold Voltage ◽  
Nanowire Array ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Threshold ◽  
Zinc Oxide Nanowire ◽  
Switching Threshold Voltage

scholarly journals Reversible Nonlinear I-V Behavior of ZnO-Decorated Graphene Nanoplatelets/Epoxy Resin Composites

Polymers ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 951 ◽  
Author(s):  
Yang Yuan ◽  
Zhaoming Qu ◽  
Qingguo Wang ◽  
Xiaoning Sun ◽  
Erwei Cheng
Keyword(s):  
Epoxy Resin ◽  
Threshold Voltage ◽  
Weight Ratio ◽  
Graphene Nanoplatelets ◽  
Switching Threshold ◽  
Solution Blending ◽  
Measurement Results ◽  
Conducting Mechanism ◽  
Significant Attention ◽  
Switching Threshold Voltage

With the more serious threats from complex electromagnetic environments, composites composed of conductive or semiconductive fillers and polymeric matrices could exhibit excellent nonlinear I-V characteristics, and have drawn significant attention in the field of overvoltage protection. In this research, graphene nanoplatelets (GNPs) are decorated by ZnO and mixed into an epoxy resin (ER) matrix via solution blending to prepare composites. A characterization analysis and the I-V measurement results of the GNPs/ER composites indicate that ZnO nanoparticles are well bonded with GNPs and exhibit obvious nonlinear I-V behavior under proper applied voltage with high nonlinear coefficients. The switching threshold voltage and nonlinear coefficients could be controlled by adjusting the weight ratio of GNPs and ZnO of the filler. Moreover, compared with the poor recoverability of pure GNP-filled ER in previous research, the GNP-ZnO/ER composites exhibited excellent reversibility of nonlinear I-V behavior under multiple repetitive I-V measurements. And compared with different composites, the sample with a 1:8 weight ratio of GO to Zn(Ac)2 presents the smallest variation of switching threshold voltage at 158 V, with a standard deviation of 1.27% from among 20 measurements, which indicates the best reversibility. Finally, the conducting mechanism of the reversible nonlinear I-V characteristic is investigated and analyzed.

UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens

2019 ◽  
Vol 7 (35) ◽  
pp. 11014-11021 ◽  
Author(s):  
Teng-Yung Huang ◽  
Chia-Hui Chen ◽  
Chia-Chi Lin ◽  
Yu-Jung Lee ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Memory Performance ◽  
Organic Polymer ◽  
Memory Devices ◽  
Aggregation Induced Emission ◽  
Spectral Overlap ◽  
Organic Phototransistor

The UV-sensing OFET memories with enhanced memory performance are developed by introducing the AIEgen-doped electret which could obtain better spectral overlap between the emission of doped electrets and the absorption of pentacene.

scholarly journals Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Memory Device ◽  
Buffer Layers ◽  
Memory Devices

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.

Future Silicon Nanocrystal Nonvolatile Memory Technology

2001 ◽  
Vol 686 ◽  
Author(s):  
Michele L. Ostraat ◽  
Jan W. De Blauwe
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Channel Length ◽  
Charge Storage ◽  
Memory Devices ◽  
Two Stage ◽  
Nanocrystal Memory

AbstractA great deal of research interest is being invested in the fabrication and characterization of nanocrystal structures as charge storage memory devices. In these flash memory devices, it is possible to measure threshold voltage shifts due to charge storage of only a few electrons per nanocrystal at room temperature. Although a variety of methods exist to fabricate nanocrystals and to incorporate them into device layers, control over the critical nanocrystal dimensions, tunnel oxide thickness, and interparticle separation and isolation remains difficult to achieve. This control is vital to produce reliable and consistent devices over large wafer areas. To address these control issues, we have developed a novel two-stage ultra clean reactor in which the Si nanocrystals are generated as single crystal, nonagglomerated, spherical aerosol particles from silane decomposition at 950°C at concentrations exceeding 108 cm−3 at sizes below 10 nm. Using existing aerosol instrumentation, it is possible to control the particle size to approximately 10% on diameter. In the second reactor, particles are passivated with a high quality oxide layer with shell thickness controllable from 0.7 to 2.0 nm. The two-stage aerosol reactor is integrated to a 200 mm wafer deposition chamber such that controlled particle densities can be deposited thermophoretically. With nanocrystal deposits of 1013 cm−2, contamination of transition metals and other elements can be controlled to less than 1010 atoms cm−2.We have fabricated 0.2 μm channel length aerosol nanocrystal floating gate memory devices using conventional MOS ULSI processing on 200 mm wafers. The aerosol nanocrystal memory devices exhibit normal transistor characteristics with drive current 30 μA/μm, subthreshold slope 200 mV/dec, and drain induced barrier lowering 100 mV/V, typical values for thick gate dielectric high substrate doped nonvolatile memory devices. Uniform Fowler-Nordheim tunneling is used to program and erase these memory devices. Despite 5 nm tunnel oxides, threshold voltage shifts > 2 V have been achieved with microsecond program and millisecond erase times at moderate operating voltages. The aerosol devices also exhibit excellent endurance cyclability with no window closure observed after 105 cycles. Furthermore, reasonable disturb times and long nonvolatility are obtained, illustrating the inherent advantage of discrete nanocrystal charge storage. No drain disturb was detected even at drain biases of 4V, indicating that little or no charge conduction occurs in the nanocrystal layer. We have demonstrated promise for aerosol nanocrystal memory devices. However, numerous issues exist for the future of nanocrystal devices. These technology issues and challenges will be discussed as directions for future work.

Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance

2018 ◽  
Vol 9 (8) ◽  
pp. 1040-1044 ◽  
Author(s):  
Xiong Xiao ◽  
Feng Zhou ◽  
Jun Jiang ◽  
Haifeng Chen ◽  
Lihua Wang ◽  
...  
Keyword(s):  
Click Reaction ◽  
Memory Performance ◽  
Memory Devices ◽  
Highly Efficient

Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

The substituent group effect on the morphology and memory performance of phenazine derivatives

2015 ◽  
Vol 3 (13) ◽  
pp. 3167-3172 ◽  
Author(s):  
Pei-Yang Gu ◽  
Yong Ma ◽  
Jing-Hui He ◽  
Guankui Long ◽  
Chengyuan Wang ◽  
...  
Keyword(s):  
Memory Performance ◽  
Memory Devices ◽  
Group Effect ◽  
Substituent Group

The memory devices based on ITO/2OHPz/Al exhibited excellent ternary memory behavior while devices based on ITO/1OHPz/Al displayed binary memory behavior.

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