The substituent group effect on the morphology and memory performance of phenazine derivatives

2015 ◽  
Vol 3 (13) ◽  
pp. 3167-3172 ◽  
Author(s):  
Pei-Yang Gu ◽  
Yong Ma ◽  
Jing-Hui He ◽  
Guankui Long ◽  
Chengyuan Wang ◽  
...  
Keyword(s):  
Memory Performance ◽  
Memory Devices ◽  
Group Effect ◽  
Substituent Group

The memory devices based on ITO/2OHPz/Al exhibited excellent ternary memory behavior while devices based on ITO/1OHPz/Al displayed binary memory behavior.

UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens

2019 ◽  
Vol 7 (35) ◽  
pp. 11014-11021 ◽  
Author(s):  
Teng-Yung Huang ◽  
Chia-Hui Chen ◽  
Chia-Chi Lin ◽  
Yu-Jung Lee ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Memory Performance ◽  
Organic Polymer ◽  
Memory Devices ◽  
Aggregation Induced Emission ◽  
Spectral Overlap ◽  
Organic Phototransistor

The UV-sensing OFET memories with enhanced memory performance are developed by introducing the AIEgen-doped electret which could obtain better spectral overlap between the emission of doped electrets and the absorption of pentacene.

Substituent group-tunable hydrogen evolution activity observed in isostructural Cu(ii)-based coordination polymer photocatalysts

2020 ◽  
Vol 49 (5) ◽  
pp. 1674-1680 ◽  
Author(s):  
Xue-Jiao Dai ◽  
Jia-Jun Wang ◽  
Lei Li ◽  
Bo Ding ◽  
Zheng-Yu Liu ◽  
...  
Keyword(s):  
Coordination Polymer ◽  
Hydrogen Evolution ◽  
Water Splitting ◽  
Group Effect ◽  
Photocatalytic Hydrogen Evolution ◽  
Substituent Group

The substituent group effect on the photocatalytic hydrogen evolution activity for water splitting was observed over a series of five isostructural copper(ii)-based layered coordination polymer photocatalysts.

Intermolecular interactions between imidazole derivatives intercalated in layered solids. Substituent group effect

2013 ◽  
Vol 204 ◽  
pp. 128-135 ◽  
Author(s):  
M. González ◽  
A.A. Lemus-Santana ◽  
J. Rodríguez-Hernández ◽  
C.I. Aguirre-Velez ◽  
M. Knobel ◽  
...  
Keyword(s):  
Intermolecular Interactions ◽  
Group Effect ◽  
Imidazole Derivatives ◽  
Substituent Group

Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance

2018 ◽  
Vol 9 (8) ◽  
pp. 1040-1044 ◽  
Author(s):  
Xiong Xiao ◽  
Feng Zhou ◽  
Jun Jiang ◽  
Haifeng Chen ◽  
Lihua Wang ◽  
...  
Keyword(s):  
Click Reaction ◽  
Memory Performance ◽  
Memory Devices ◽  
Highly Efficient

Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Gold Nanoparticle Based Electrically Rewritable Polymer Memory Devices

2008 ◽  
Vol 54 ◽  
pp. 480-485 ◽  
Author(s):  
Dominic Prime ◽  
Shashi Paul
Keyword(s):  
Low Cost ◽  
Memory Performance ◽  
Electronic Devices ◽  
Memory Devices ◽  
Future Technology ◽  
Active Layers ◽  
Device Structures ◽  
The Subject ◽  
Processing Steps ◽  
Polymer Memory

Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This interest can be attributed to the low cost, easy processing steps and simple device structures of organic electronics when compared to conventional silicon and inorganic electronics. In the field of organic electronic memories, non-volatile, rewritable polymer memory devices (PMDs) have shown promise as a future technology where cost and compatibility with flexible substrates are important factors. In this paper PMDs based on active layers containing an admixture of polystyrene, gold nanoparticles and 8-hydroxyquinoline will be presented, showing the devices’ electrical characteristics and memory performance attributes, and where possible discussing possible mechanisms of operation.

Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk–shell microspheres in a poly(3-hexylthiophene) layer

Nanoscale ◽  
2015 ◽  
Vol 7 (46) ◽  
pp. 19579-19585 ◽  
Author(s):  
Peng Wang ◽  
Quan Liu ◽  
Chun-Yu Zhang ◽  
Jun Jiang ◽  
Li-Hua Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Memory Devices ◽  
Inorganic Hybrid ◽  
Variable Memory

Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.

Theoretical insight into the mechanism, regioselectivity, and substituent group effect of Rh-catalyzed synthesis of 1,2-benzothiazines from NH-sulfoximines and diazo compounds

2018 ◽  
Vol 16 (29) ◽  
pp. 5321-5331 ◽  
Author(s):  
Jing Yan ◽  
Chengbu Liu ◽  
Dongju Zhang
Keyword(s):  
Theoretical Study ◽  
Diazo Compounds ◽  
Group Effect ◽  
Substituent Group ◽  
Theoretical Insight ◽  
Insight Into

A theoretical study of Rh-catalyzed synthesis of 1,2-benzothiazines from NH-sulfoximines and diazo compounds.

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms

2007 ◽  
Vol 7 (1) ◽  
pp. 329-334 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
J. I. Wong ◽  
M. Yang ◽  
T. S. Khor ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Performance ◽  
Low Energy ◽  
Memory Window ◽  
Memory Devices ◽  
Hot Electron ◽  
Silicon Nanocrystal ◽  
Non Volatile Memory ◽  
Drain Bias ◽  
Volatile Memory

Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the largest memory window among the three programming mechanisms. The DCHE and SCHE have similar endurance characteristics, but the SCHE has a longer retention time than the DCHE. Both the DCHE and SCHE have a larger memory window, a better endurance and a longer retention time as compared to the FN. Explanations to the phenomena are given.

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