UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens

2019 ◽  
Vol 7 (35) ◽  
pp. 11014-11021 ◽  
Author(s):  
Teng-Yung Huang ◽  
Chia-Hui Chen ◽  
Chia-Chi Lin ◽  
Yu-Jung Lee ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Memory Performance ◽  
Organic Polymer ◽  
Memory Devices ◽  
Aggregation Induced Emission ◽  
Spectral Overlap ◽  
Organic Phototransistor

The UV-sensing OFET memories with enhanced memory performance are developed by introducing the AIEgen-doped electret which could obtain better spectral overlap between the emission of doped electrets and the absorption of pentacene.

Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance

2018 ◽  
Vol 9 (8) ◽  
pp. 1040-1044 ◽  
Author(s):  
Xiong Xiao ◽  
Feng Zhou ◽  
Jun Jiang ◽  
Haifeng Chen ◽  
Lihua Wang ◽  
...  
Keyword(s):  
Click Reaction ◽  
Memory Performance ◽  
Memory Devices ◽  
Highly Efficient

Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.

Electrical bistability in a composite of polymer and barium titanate nanoparticles

2009 ◽  
Vol 367 (1905) ◽  
pp. 4227-4234 ◽  
Author(s):  
I. Salaoru ◽  
S. Paul
Keyword(s):  
Electrical Conductivity ◽  
Barium Titanate ◽  
Organic Molecules ◽  
Electronic Devices ◽  
Organic Polymer ◽  
Memory Devices ◽  
Data Retention ◽  
Metal Electrodes ◽  
Small Organic Molecules ◽  
Barium Titanate Nanoparticles

Growth in the use of organic materials in the fabrication of electronic devices is on the rise. Recently, some attempts have been undertaken to manufacture polymer memory devices. Such devices are fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and nanoparticles) between two metal electrodes. These devices show two electrical conductivity states (‘high’ and ‘low’) when a voltage is applied, thus rendering the structures suitable for data retention. In this paper, we describe an attempt to fabricate memory devices using ferroelectric nanoparticles embedded in an organic polymer. This paper also discusses issues related to the observed memory effect.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

The substituent group effect on the morphology and memory performance of phenazine derivatives

2015 ◽  
Vol 3 (13) ◽  
pp. 3167-3172 ◽  
Author(s):  
Pei-Yang Gu ◽  
Yong Ma ◽  
Jing-Hui He ◽  
Guankui Long ◽  
Chengyuan Wang ◽  
...  
Keyword(s):  
Memory Performance ◽  
Memory Devices ◽  
Group Effect ◽  
Substituent Group

The memory devices based on ITO/2OHPz/Al exhibited excellent ternary memory behavior while devices based on ITO/1OHPz/Al displayed binary memory behavior.

Gold Nanoparticle Based Electrically Rewritable Polymer Memory Devices

2008 ◽  
Vol 54 ◽  
pp. 480-485 ◽  
Author(s):  
Dominic Prime ◽  
Shashi Paul
Keyword(s):  
Low Cost ◽  
Memory Performance ◽  
Electronic Devices ◽  
Memory Devices ◽  
Future Technology ◽  
Active Layers ◽  
Device Structures ◽  
The Subject ◽  
Processing Steps ◽  
Polymer Memory

Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This interest can be attributed to the low cost, easy processing steps and simple device structures of organic electronics when compared to conventional silicon and inorganic electronics. In the field of organic electronic memories, non-volatile, rewritable polymer memory devices (PMDs) have shown promise as a future technology where cost and compatibility with flexible substrates are important factors. In this paper PMDs based on active layers containing an admixture of polystyrene, gold nanoparticles and 8-hydroxyquinoline will be presented, showing the devices’ electrical characteristics and memory performance attributes, and where possible discussing possible mechanisms of operation.

Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk–shell microspheres in a poly(3-hexylthiophene) layer

Nanoscale ◽  
2015 ◽  
Vol 7 (46) ◽  
pp. 19579-19585 ◽  
Author(s):  
Peng Wang ◽  
Quan Liu ◽  
Chun-Yu Zhang ◽  
Jun Jiang ◽  
Li-Hua Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Memory Devices ◽  
Inorganic Hybrid ◽  
Variable Memory

Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.

Small Organic Molecules for Electrically Re-writable Non-volatile Polymer Memory Devices

2010 ◽  
Vol 1250 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Small Molecules ◽  
Polymer Matrix ◽  
Organic Molecules ◽  
Electrical Conductance ◽  
Metal Structure ◽  
Organic Polymer ◽  
Memory Devices ◽  
Electrical Behaviour ◽  
Small Organic Molecules ◽  
Polymer Memory

AbstractThe usage of organic materials in the manufacture of electronic polymer memory devices is on the rise. Polymer memory devices are fabricated by depositing a blend (an admixture of organic polymer, small molecules and nanoparticles) between two metal electrodes. The primary aim is to produce devices that exhibit two distinct electrical conductance states when a voltage is applied. These two states can be viewed as the realisation of non-volatile memory. This is an interesting development; however, there are a number of theories that have been proposed to explain the observed electrical behaviour. We have proposed a model that is based on electric dipole formation in the polymer matrix. Here, we investigate further the proposed model by deliberately creating electric dipoles in a polymer matrix using electron donors (8-Hydroxyquinoline, Tetrathiafulvalene and Bis(ethylenedithio)tetrathiafulvalene) and electron acceptors (7,7,8,8-Tetracyanoquinodimethane, Tetracyanoethylene and Fullerene) small molecules.Two types of structures were investigated (i) a metal/blend of polymer and small molecules/metal (MOM), device and (ii) a metal/insulator/blend of small molecules and polymer/semiconductor (MIS) architecture. A blend of polymer and small organic molecules was prepared in methanol and spin-coated onto a glass substrate marked with thin aluminium (Al) tracks; a top Al contact was then evaporated onto the blend after drying - this resulted in a metal-organic-metal structure. The MIS structures consisted of an ohmic bottom Al contact, p-type Si, a polymer blend (two small organic molecules and insulating polymer), followed by polyvinyl acetate and finally a top, circular Al electrode. In-depth FTIR studies were carried out to understand the observed electrical behaviour. An electrical analysis of these structures was performed using an HP4140B picoammeter and an HP 4192A impedance analyser at a frequency of 1 MHz.

Porous Organic Polymer from Aggregation-Induced Emission Macrocycle for White-Light Emission

2018 ◽  
Vol 51 (19) ◽  
pp. 7863-7871 ◽  
Author(s):  
Zhen Wang ◽  
Sen Yan ◽  
Huang-Chen Cui ◽  
Guang Cheng ◽  
Hui Ma ◽  
...  
Keyword(s):  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Organic Polymer ◽  
Aggregation Induced Emission ◽  
Porous Organic Polymer

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms

2007 ◽  
Vol 7 (1) ◽  
pp. 329-334 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
J. I. Wong ◽  
M. Yang ◽  
T. S. Khor ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Performance ◽  
Low Energy ◽  
Memory Window ◽  
Memory Devices ◽  
Hot Electron ◽  
Silicon Nanocrystal ◽  
Non Volatile Memory ◽  
Drain Bias ◽  
Volatile Memory

Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the largest memory window among the three programming mechanisms. The DCHE and SCHE have similar endurance characteristics, but the SCHE has a longer retention time than the DCHE. Both the DCHE and SCHE have a larger memory window, a better endurance and a longer retention time as compared to the FN. Explanations to the phenomena are given.

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