Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance

2018 ◽  
Vol 9 (8) ◽  
pp. 1040-1044 ◽  
Author(s):  
Xiong Xiao ◽  
Feng Zhou ◽  
Jun Jiang ◽  
Haifeng Chen ◽  
Lihua Wang ◽  
...  
Keyword(s):  
Click Reaction ◽  
Memory Performance ◽  
Memory Devices ◽  
Highly Efficient

Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.

UV-sensing organic phototransistor memory devices with a doped organic polymer electret composed of triphenylamine-based aggregation-induced emission luminogens

2019 ◽  
Vol 7 (35) ◽  
pp. 11014-11021 ◽  
Author(s):  
Teng-Yung Huang ◽  
Chia-Hui Chen ◽  
Chia-Chi Lin ◽  
Yu-Jung Lee ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Memory Performance ◽  
Organic Polymer ◽  
Memory Devices ◽  
Aggregation Induced Emission ◽  
Spectral Overlap ◽  
Organic Phototransistor

The UV-sensing OFET memories with enhanced memory performance are developed by introducing the AIEgen-doped electret which could obtain better spectral overlap between the emission of doped electrets and the absorption of pentacene.

Perfluoropolyether/poly(ethylene glycol) triblock copolymers with controllable self-assembly behaviour for highly efficient anti-bacterial materials

RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64170-64179 ◽  
Author(s):  
Jing Song ◽  
Qun Ye ◽  
Wang Ting Lee ◽  
Xiaobai Wang ◽  
Tao He ◽  
...  
Keyword(s):  
Ethylene Glycol ◽  
Self Assembly ◽  
Click Reaction ◽  
Triblock Copolymers ◽  
Poly Ethylene Glycol ◽  
Highly Efficient ◽  
Poly Ethylene ◽  
High Yields

A series of perfluoropolyether/poly(ethylene glycol) (PFPE/PEG) triblock copolymers PEG/PFPE/PEG (P1–P3) and PFPE/PEG/PFPE (P4–P5) were prepared via thiol–ene click reaction in high yields.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Accelerated Synthesis of Surface Functionalized Mannosylated Dendrimers Built on Cyclotriphosphazene Core

MRS Advances ◽  
2019 ◽  
Vol 4 (59-60) ◽  
pp. 3187-3198
Author(s):  
Lamyaa M. Sallam ◽  
Tze Chieh Shiao ◽  
Celia Sehad ◽  
Abdelkrim Azzouz ◽  
René Roy
Keyword(s):  
Click Reaction ◽  
Core Structure ◽  
Surface Groups ◽  
The Core ◽  
Onion Peel ◽  
Highly Efficient

ABSTRACTThe syntheses of five propargylated dendrimer scaffolds ranging from 2, 3, 4, 6, and 12 surface groups are described together with a 2-azidoethyl α-D-mannopyranoside. The former is appended to the core structure using highly efficient copper-catalysed azide-alkyne cycloaddition (CuAAC) (“click reaction”) to provide glycodendrimers in an accelerated approach. Two of the core structures are based on cyclotrisphosphazene, thus expanding the scope of the “onion-peel” strategy to build dendritic architectures with a large number of surface groups at the G1 generation only.

The substituent group effect on the morphology and memory performance of phenazine derivatives

2015 ◽  
Vol 3 (13) ◽  
pp. 3167-3172 ◽  
Author(s):  
Pei-Yang Gu ◽  
Yong Ma ◽  
Jing-Hui He ◽  
Guankui Long ◽  
Chengyuan Wang ◽  
...  
Keyword(s):  
Memory Performance ◽  
Memory Devices ◽  
Group Effect ◽  
Substituent Group

The memory devices based on ITO/2OHPz/Al exhibited excellent ternary memory behavior while devices based on ITO/1OHPz/Al displayed binary memory behavior.

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