Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

2002 ◽  
pp. 256-257 ◽  
Author(s):  
Hwa Young Kim ◽  
Jeunghee Park ◽  
Hyunik Yang
Keyword(s):  
Silicon Carbide ◽  
Direct Synthesis ◽  
Silicon Substrates

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

scholarly journals Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16662-16667 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Andreas Fissel ◽  
Glenn Walker ◽  
Jessica Chai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Large Diameter ◽  
Silicon Substrates

The unique growth mechanism of alternating supply epitaxy enables uniform 3C-SiC to be deposited on multiple large-diameter Si wafers.

Initial stages of the epitaxial silicon carbide film growth on silicon substrates

1989 ◽  
Vol 116 (2) ◽  
pp. K169-K172
Author(s):  
L. I. Berezhinskii ◽  
S. I. Vlaskina ◽  
V. E. Rodionov ◽  
H. A. Shamuratov
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Silicon Carbide Film
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