Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts

Vacuum ◽  
2002 ◽  
Vol 67 (1) ◽  
pp. 101-113 ◽  
Author(s):  
Dietrich R.T. Zahn ◽  
Sunggook Park ◽  
Thorsten U. Kampen
Keyword(s):  
Schottky Barrier ◽  
Organic Modification ◽  
Barrier Heights ◽  
Semiconductor Contacts

The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence

2015 ◽  
Vol 17 (1) ◽  
pp. 134-137 ◽  
Author(s):  
Xue-Bing Yin ◽  
Zheng-Hua Tan ◽  
Xin Guo
Keyword(s):  
Experimental Evidence ◽  
Schottky Barrier ◽  
Resistive Switching ◽  
Metallic Electrode ◽  
Barrier Heights ◽  
Direct Experimental Evidence

Different Schottky barrier heights are responsible for the different resistance states in the metallic electrode/donor-doped SrTiO3 stack.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME

1994 ◽  
Vol 01 (04) ◽  
pp. 429-433 ◽  
Author(s):  
MARTINA HEINEMANN
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Barriers ◽  
High Coverage ◽  
Large Group ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces ◽  
First Time

The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

Schottky Barrier Heights of PT Silicides on SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
J.R. Jimenez ◽  
X. Xiao ◽  
J.C. Sturm ◽  
P.W. Pellegrini ◽  
M. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Infrared Detector ◽  
Schottky Barriers ◽  
Band Offset ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Metal Thickness ◽  
Deposited Metal

ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

CRYOGENIC OPERATION OF GaN SCHOTTKY RECTIFIERS

2011 ◽  
Vol 20 (03) ◽  
pp. 457-461 ◽  
Author(s):  
HARSH NAIK ◽  
TOM MARRON ◽  
T. PAUL CHOW
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Low Temperatures ◽  
Cryogenic Temperatures ◽  
Barrier Heights ◽  
Reverse Leakage Current ◽  
Schottky Rectifiers ◽  
Time Operation ◽  
Reverse Blocking ◽  
First Time

We report for the first time operation of GaN Schottky rectifiers under cryogenic temperatures. A 600V, 4A GaN Schottky rectifiers from Velox Semiconductors has been used for the characterization. Forward conduction and reverse blocking performance was measured down to 77K. Two Schottky barrier heights have been noticed at low temperatures and a tunneling limited reverse leakage current was observed for the rectifier.

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