Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation

1990 ◽  
Vol 41 (11) ◽  
pp. 7918-7921 ◽  
Author(s):  
M. H. Hecht
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Formation

scholarly journals Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation

2007 ◽  
Vol 25 (4) ◽  
pp. 1405 ◽  
Author(s):  
H. L. Mosbacker ◽  
S. El Hage ◽  
M. Gonzalez ◽  
S. A. Ringel ◽  
M. Hetzer ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation ◽  
Subsurface Defects

The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

1986 ◽  
Vol 58 (7) ◽  
pp. 429-432 ◽  
Author(s):  
M.K. Kelly ◽  
A. Kahn ◽  
Nacira Tache ◽  
auE. Colavita ◽  
G. Margaritondo
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Low Temperature Gaas ◽  
Kinetics Of

Role of Cation Dissociation in Schottky Barrier Formation at II–VI Compound Semiconductor-Metal Interfaces

1981 ◽  
Vol 10 ◽  
Author(s):  
C. F. Brucker ◽  
L. J. Brillson
Keyword(s):  
Schottky Barrier ◽  
Ultrahigh Vacuum ◽  
Active Species ◽  
Barrier Formation ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Interfacial Chemical Reaction ◽  
Metal Interfaces ◽  
Cation Dissociation

We used UV and X-ray photoemission spectroscopies to probe the relation between the chemical and electronic structure at ultrahigh-vacuum-cleaved CdS-metal and CdSe-metal interfaces. When combined with current-voltage and capacitance-voltage studies of the same interfaces in ultrahigh vacuum, the experimental results indicate that partially dissociated cadmium cations, produced as a consequence of interfacial chemical reaction, may be the electrically active species giving rise to the observed Fermi level stabilization at these contacts. The extent of cation dissociation, a spectroscopically determined quantity, is shown to correlate inversely with the measured Schottky barrier height. An indirect and modified doping effect is suggested as one possible mechanism to explain this behavior. Features of interdiffusion, in particular regarding the interfacial distribution of dissociated cadmium, are also described.

Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract)

1997 ◽  
Vol 81 (8) ◽  
pp. 4362-4362 ◽  
Author(s):  
B. T. Jonker ◽  
E. M. Kneedler ◽  
P. Thibado ◽  
O. J. Glembocki ◽  
L. J. Whitman ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Interfacial Structure ◽  
Barrier Formation ◽  
Structure Abstract
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