scholarly journals Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy

ACS Omega ◽  
2020 ◽  
Vol 5 (14) ◽  
pp. 8090-8096
Author(s):  
Qiu Li ◽  
Yong Wang ◽  
Tiantian Li ◽  
Wei Li ◽  
Feifan Wang ◽  
...  
2009 ◽  
Vol 16 (06) ◽  
pp. 925-928 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).


2000 ◽  
Vol 615 ◽  
Author(s):  
Ingrid De Wolf

ABSTRACTIn this paper, the different applications of Raman spectroscopy for the study of thin films is briefly discussed, using examples from microelectronics. Special attention is given to the application of micro-Raman spectroscopy for the measurement of local stress in and near films.


2015 ◽  
Author(s):  
Shaveta Sharma ◽  
Rita Sharma ◽  
Praveen Kumar ◽  
Ravi Chander ◽  
R. Thangaraj ◽  
...  

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.


2009 ◽  
Vol 94 (13) ◽  
pp. 133301 ◽  
Author(s):  
Ingrid Stenger ◽  
Alexandre Frigout ◽  
Denis Tondelier ◽  
Bernard Geffroy ◽  
Razvigor Ossikovski ◽  
...  

2015 ◽  
Vol 46 (7) ◽  
pp. 636-643 ◽  
Author(s):  
Anju Ahlawat ◽  
S. Satapathy ◽  
V. G. Sathe ◽  
R. J. Choudhary ◽  
M. K. Singh ◽  
...  

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