scholarly journals Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

Author(s):  
Sandeep Sohal ◽  
Madhavie Edirisooriya ◽  
Thomas Myers ◽  
Mark Holtz
2009 ◽  
Vol 16 (06) ◽  
pp. 925-928 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).


2007 ◽  
Vol 90 (4) ◽  
pp. 043102 ◽  
Author(s):  
Ching-Lien Hsiao ◽  
Li-Wei Tu ◽  
Tung-Wei Chi ◽  
Min Chen ◽  
Tai-Fa Young ◽  
...  

1996 ◽  
Vol 24 (8) ◽  
pp. 906-909
Author(s):  
Akio MIYAMOTO ◽  
Hidetsugu YOSHIDA ◽  
Yusuke MORI ◽  
Takatomo SASAKI ◽  
Sadao NAKAI

2013 ◽  
Vol 52 (8) ◽  
pp. 1682 ◽  
Author(s):  
Heather P. Howard ◽  
Anthony F. Aiello ◽  
Justin G. Dressler ◽  
Nicholas R. Edwards ◽  
Terrance J. Kessler ◽  
...  

2021 ◽  
pp. 103793
Author(s):  
D.V. Marin ◽  
V.A. Shvets ◽  
I.A. Azarov ◽  
M.V. Yakushev ◽  
S.V. Rykhlitskii

2010 ◽  
Vol 257 (5) ◽  
pp. 1678-1683 ◽  
Author(s):  
A.M. Chen ◽  
H.F. Xu ◽  
Y.F. Jiang ◽  
L.Z. Sui ◽  
D.J. Ding ◽  
...  

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