Phase characterisation of TiO/sub 2/ thin films using micro-Raman spectroscopy and glancing angle X-ray diffraction

2005 ◽  
Author(s):  
J. Hugmann ◽  
B.S. Richards ◽  
A. Crosky
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Glancing Angle

Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films

2005 ◽  
Vol 40 (16) ◽  
pp. 4293-4298 ◽  
Author(s):  
S. N. Tkachev ◽  
M. H. Manghnani ◽  
A. Niilisk ◽  
J. Aarik ◽  
H. Mändar
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy

PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si(111) SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2009 ◽  
Vol 16 (06) ◽  
pp. 925-928 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Raman Modes ◽  
Orientation Growth ◽  
Good Agreement

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

2013 ◽  
Vol 818 ◽  
pp. 88-91
Author(s):  
Kun Liu ◽  
Ji Sheng Yang ◽  
Rui Li ◽  
Wei Peng ◽  
Shi Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Deposition Technology

The properties of the absorber layer of solar cell CuInSe2(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A1 mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.

Formation of the YBa2Cu2NbOy phase in thin films

2009 ◽  
Vol 24 (1) ◽  
pp. 212-216
Author(s):  
Srinivas Sathiraju ◽  
Paul N. Barnes ◽  
Robert A. Wheeler
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
New Phase

We report the systematic substitution of Nb at the Cu1 site of YBa2Cu3Oy in thin films to form a new phase of YBa2Cu2NbO8. These films were deposited on SrTiO3(100) crystals using pulsed laser deposition and deposited at an optimal temperature of 850 °C. Films were characterized using x-ray diffraction (XRD), atomic force microscopy, x-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, and transmission electron microscopy. XRD of these films indicate c-axis oriented YBa2Cu2NbOy formation. XPS and micro-Raman spectroscopy analysis suggests Cu exists in the +2 state.

scholarly journals Spin transitions in La0.7 Ba0.3CoO3 thin films revealed by combining Raman spectroscopy and X-ray diffraction

2016 ◽  
Vol 120 (1) ◽  
pp. 015308 ◽  
Author(s):  
Zied Othmen ◽  
Olivier Copie ◽  
Kais Daoudi ◽  
Michel Boudard ◽  
Pascale Gemeiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Transitions

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Combined synchrotron x-ray diffraction and micro-Raman for following in situ the growth of solution-deposited YBa2Cu3O7 thin films

2005 ◽  
Vol 20 (12) ◽  
pp. 3270-3273 ◽  
Author(s):  
F. Berberich ◽  
H. Graafsma ◽  
B. Rousseau ◽  
A. Canizares ◽  
R. Ramy Ratiarison ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Additional Information ◽  
Micro Raman Spectroscopy ◽  
High Temperature Process ◽  
Structural Growth ◽  
Metal Organic ◽  
Insight Into

A unique combination of in situ synchrotron x-ray diffraction and in situ micro-Raman spectroscopy was used to study the growth process of YBa2Cu3O6+x films obtained by metal organic decomposition using trifluoroacetate precursor on LaAlO3 substrates. The techniques give complementary information: x-ray diffraction gives insight into the structural growth, whereas micro-Raman spectroscopy gives information of the chemical composition with additional information on the texture. To perform both experiments in situ, a special high-temperature process chamber was designed.

Study on integration of aluminum-doped zinc oxide (AZO) thin films with graphene oxide (GO)

2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Aluminum Doped Zinc Oxide ◽  
Uv Visible

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

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