Structural investigation of Bi doped InSe chalcogenide thin films using Raman spectroscopy

2015 ◽  
Author(s):  
Shaveta Sharma ◽  
Rita Sharma ◽  
Praveen Kumar ◽  
Ravi Chander ◽  
R. Thangaraj ◽  
...  
ACS Omega ◽  
2020 ◽  
Vol 5 (14) ◽  
pp. 8090-8096
Author(s):  
Qiu Li ◽  
Yong Wang ◽  
Tiantian Li ◽  
Wei Li ◽  
Feifan Wang ◽  
...  

2010 ◽  
Vol 495 (2) ◽  
pp. 642-645 ◽  
Author(s):  
M. Erazú ◽  
J. Rocca ◽  
M. Fontana ◽  
A. Ureña ◽  
B. Arcondo ◽  
...  

2007 ◽  
Vol 4 (6) ◽  
pp. 1822-1829 ◽  
Author(s):  
A. Orendorz ◽  
A. Brodyanski ◽  
J. Lösch ◽  
L. H. Bai ◽  
Z. H. Chen ◽  
...  

2005 ◽  
Vol 66 (11) ◽  
pp. 1954-1960 ◽  
Author(s):  
E. Rudigier ◽  
J. Djordjevic ◽  
C. von Klopmann ◽  
B. Barcones ◽  
A. Pérez-Rodríguez ◽  
...  

Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.


2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.


2021 ◽  
pp. 149621
Author(s):  
Correr Wagner ◽  
Messaddeq Sandra Helena ◽  
Douaud Alexandre ◽  
Messaddeq Younes

The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester

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