Polarized micro-Raman spectroscopy study of pentacene thin films

2009 ◽  
Vol 94 (13) ◽  
pp. 133301 ◽  
Author(s):  
Ingrid Stenger ◽  
Alexandre Frigout ◽  
Denis Tondelier ◽  
Bernard Geffroy ◽  
Razvigor Ossikovski ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Spectroscopy Study ◽  
Micro Raman Spectroscopy

Raman Spectroscopy: A Unique Tool for the Study of Thin Films

2000 ◽  
Vol 615 ◽  
Author(s):  
Ingrid De Wolf
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Local Stress ◽  
Micro Raman Spectroscopy

ABSTRACTIn this paper, the different applications of Raman spectroscopy for the study of thin films is briefly discussed, using examples from microelectronics. Special attention is given to the application of micro-Raman spectroscopy for the measurement of local stress in and near films.

XANES and micro-Raman spectroscopy study of the barium titanosilicates BaTiSi2O7 and BaTiSi4O11

2016 ◽  
Vol 122 (4) ◽  
Author(s):  
A. Viani ◽  
S. Pollastri ◽  
P. Macova ◽  
A. Palermo ◽  
M. Peréz-Estébanez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spectroscopy Study ◽  
Micro Raman Spectroscopy

scholarly journals Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy

ACS Omega ◽  
2020 ◽  
Vol 5 (14) ◽  
pp. 8090-8096
Author(s):  
Qiu Li ◽  
Yong Wang ◽  
Tiantian Li ◽  
Wei Li ◽  
Feifan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Strain Measurement ◽  
Molecular Beam ◽  
Micro Raman Spectroscopy ◽  
Chalcogenide Thin Films

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

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