Role of fluctuations in carrier transfer in semiconductor heterostructures

2006 ◽  
Vol 138 (10-11) ◽  
pp. 546-548 ◽  
Author(s):  
I.V. Rozhansky ◽  
N.S. Averkiev
Keyword(s):  
Semiconductor Heterostructures ◽  
Carrier Transfer

scholarly journals Role of substrate strain to tune energy bands–Seebeck relationship in semiconductor heterostructures

2021 ◽  
Vol 129 (2) ◽  
pp. 025301
Author(s):  
Vitaly S. Proshchenko ◽  
Manoj Settipalli ◽  
Artem K. Pimachev ◽  
Sanghamitra Neogi
Keyword(s):  
Semiconductor Heterostructures ◽  
Energy Bands ◽  
Substrate Strain

scholarly journals Deciphering the role of quantum dot size in the ultrafast charge carrier dynamics at the perovskite–quantum dot interface

2020 ◽  
Vol 8 (42) ◽  
pp. 14834-14844
Author(s):  
Piotr Piatkowski ◽  
Sofia Masi ◽  
Pavel Galar ◽  
Mario Gutiérrez ◽  
Thi Tuyen Ngo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Rate Constants ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Charge Carrier Dynamics ◽  
Conduction Bands

Charge-carrier transfer (CT) from the perovskite host to PbS QDs were studied using fs-transient absorption and THz techniques. The CT rate constants increase with the size of QDs due to a change in the position of valence and conduction bands in PbS QDs.

Spectral Dependence of Nanocrystal Photoionization Probability: The Role of Hot-Carrier Transfer

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5045-5055 ◽  
Author(s):  
Lazaro A. Padilha ◽  
István Robel ◽  
Doh C. Lee ◽  
Prashant Nagpal ◽  
Jeffrey M. Pietryga ◽  
...  
Keyword(s):  
Spectral Dependence ◽  
Hot Carrier ◽  
Carrier Transfer

Role of carrier-transfer in the optical nonlinearity of graphene/Bi2Te3 heterojunctions

Nanoscale ◽  
2020 ◽  
Vol 12 (32) ◽  
pp. 16956-16966 ◽  
Author(s):  
Jia-Chi Lan ◽  
Junpeng Qiao ◽  
Wei-Heng Sung ◽  
Chun-Hu Chen ◽  
Ren-Huai Jhang ◽  
...  
Keyword(s):  
Optical Nonlinearity ◽  
Carrier Transfer

By fabricating graphene/Bi2Te3 heterojunction, the mechanism of carrier-transfer resulting in enhanced optical nonlinearity was investigated. The rapid over-saturation of Bi2Te3 is solved and a better performance is acquired in Q-switched laser.

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Rough versus dilute interfaces in semiconductor heterostructures: The role of growth conditions

1994 ◽  
Vol 65 (10) ◽  
pp. 1287-1289 ◽  
Author(s):  
W. Grieshaber ◽  
C. Bodin ◽  
J. Cibert ◽  
J. Gaj ◽  
Y. Merle d’Aubigné ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Semiconductor Heterostructures
Sign in / Sign up

Export Citation Format

Share Document