Role of fluctuations in carrier transfer through potential barriers and quantum wells

2007 ◽  
Author(s):  
I. V. Rozhansky ◽  
N. S. Averkiev
Keyword(s):  
Quantum Wells ◽  
Potential Barriers ◽  
Carrier Transfer

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

scholarly journals Deciphering the role of quantum dot size in the ultrafast charge carrier dynamics at the perovskite–quantum dot interface

2020 ◽  
Vol 8 (42) ◽  
pp. 14834-14844
Author(s):  
Piotr Piatkowski ◽  
Sofia Masi ◽  
Pavel Galar ◽  
Mario Gutiérrez ◽  
Thi Tuyen Ngo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Rate Constants ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Charge Carrier Dynamics ◽  
Conduction Bands

Charge-carrier transfer (CT) from the perovskite host to PbS QDs were studied using fs-transient absorption and THz techniques. The CT rate constants increase with the size of QDs due to a change in the position of valence and conduction bands in PbS QDs.

The role of Coulombic coupling in electroabsorption of square quantum wells

2001 ◽  
Vol 16 (8) ◽  
pp. 724-732 ◽  
Author(s):  
X Chen ◽  
M P Earnshaw ◽  
W Batty ◽  
D W E Allsopp
Keyword(s):  
Quantum Wells

Spectral Dependence of Nanocrystal Photoionization Probability: The Role of Hot-Carrier Transfer

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5045-5055 ◽  
Author(s):  
Lazaro A. Padilha ◽  
István Robel ◽  
Doh C. Lee ◽  
Prashant Nagpal ◽  
Jeffrey M. Pietryga ◽  
...  
Keyword(s):  
Spectral Dependence ◽  
Hot Carrier ◽  
Carrier Transfer

scholarly journals Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering

2012 ◽  
Vol 112 (12) ◽  
pp. 123105 ◽  
Author(s):  
L. Lever ◽  
Z. Ikonić ◽  
A. Valavanis ◽  
R. W. Kelsall ◽  
M. Myronov ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Highly Strained ◽  
Sige Quantum Wells

The importance of person-centred care and how to achieve it

2021 ◽  
Vol 15 (7) ◽  
pp. 334-339
Author(s):  
David Stonehouse
Keyword(s):  
Emotional Intelligence ◽  
Self Awareness ◽  
Support Worker ◽  
Patient Centred Care ◽  
Potential Barriers ◽  
Important Concept

This article discusses the important concept of person-centred care and how this can be achieved. Following an introduction defining what is meant by this term and contrasting it with the term patient-centred care, the relevant and pertinent parts of the Nursing and Midwifery Council code will then be identified and discussed. The four principles of person-centred care will then be presented. The role of the support worker and nursing associate will be made clear in how the wishes and needs of patients can be gained. Self-awareness, emotional intelligence and communication will be discussed in relation to this. Finally, two potential barriers to the successful achievement of person-centred care will be identified.

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