Spectral Dependence of Nanocrystal Photoionization Probability: The Role of Hot-Carrier Transfer

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5045-5055 ◽  
Author(s):  
Lazaro A. Padilha ◽  
István Robel ◽  
Doh C. Lee ◽  
Prashant Nagpal ◽  
Jeffrey M. Pietryga ◽  
...  
Keyword(s):  
Spectral Dependence ◽  
Hot Carrier ◽  
Carrier Transfer

The role of intervalley phonons in hot carrier transfer and extraction in type-II InAs/AlAsSb quantum-well solar cells

2019 ◽  
Vol 34 (9) ◽  
pp. 094001 ◽  
Author(s):  
V R Whiteside ◽  
H Esmaielpour ◽  
T D Mishima ◽  
K R Dorman ◽  
M B Santos ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Type Ii ◽  
Hot Carrier ◽  
Carrier Transfer

scholarly journals Deciphering the role of quantum dot size in the ultrafast charge carrier dynamics at the perovskite–quantum dot interface

2020 ◽  
Vol 8 (42) ◽  
pp. 14834-14844
Author(s):  
Piotr Piatkowski ◽  
Sofia Masi ◽  
Pavel Galar ◽  
Mario Gutiérrez ◽  
Thi Tuyen Ngo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Rate Constants ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Charge Carrier Dynamics ◽  
Conduction Bands

Charge-carrier transfer (CT) from the perovskite host to PbS QDs were studied using fs-transient absorption and THz techniques. The CT rate constants increase with the size of QDs due to a change in the position of valence and conduction bands in PbS QDs.

Role of carrier-transfer in the optical nonlinearity of graphene/Bi2Te3 heterojunctions

Nanoscale ◽  
2020 ◽  
Vol 12 (32) ◽  
pp. 16956-16966 ◽  
Author(s):  
Jia-Chi Lan ◽  
Junpeng Qiao ◽  
Wei-Heng Sung ◽  
Chun-Hu Chen ◽  
Ren-Huai Jhang ◽  
...  
Keyword(s):  
Optical Nonlinearity ◽  
Carrier Transfer

By fabricating graphene/Bi2Te3 heterojunction, the mechanism of carrier-transfer resulting in enhanced optical nonlinearity was investigated. The rapid over-saturation of Bi2Te3 is solved and a better performance is acquired in Q-switched laser.

scholarly journals Modeling of hot-carrier degradation based on thorough carrier transport treatment

2014 ◽  
Vol 27 (4) ◽  
pp. 479-508 ◽  
Author(s):  
Stanislav Tyaginov ◽  
Yannick Wimmer ◽  
Tibor Grasser
Keyword(s):  
Electron Scattering ◽  
Carrier Transport ◽  
Drain Current ◽  
Boltzmann Transport ◽  
Hot Carrier ◽  
Statistical Fluctuations ◽  
Channel Gate ◽  
Current Change ◽  
Hot Carrier Degradation

We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

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