Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

2008 ◽  
Vol 372 (8) ◽  
pp. 1313-1318 ◽  
Author(s):  
Xing-Tao An ◽  
Jian-Jun Liu
2011 ◽  
Vol 10 (04) ◽  
pp. 381-394 ◽  
Author(s):  
AISHA GOKCE ◽  
RYAN STEARRETT ◽  
E. R. NOWAK ◽  
C. NORDMAN

Charge-current shot noise is investigated in single magnetic tunnel junctions and devices having multiple junctions that are connected in series. The ratio of the measured shot noise in single junctions to the expected Poisson value, namely the Fano factor, F, is observed to vary from 1 to well below 0.5. Deviations from F = 1 are attributed to localized states (defects) located in the tunnel barrier or at the interfaces with the magnetic electrodes. For series arrays of junctions, the Fano factor scales inversely with the number (1 ≤ N ≤ 30) of junctions in series, even for junctions exhibiting sub-Poissonian (F < 1) shot noise. The 1/N scaling is consistent with the incoherent tunneling of electrons across junctions and indicates that each junction behaves as an individual noise source. The advantages of incorporating series arrays of magnetic tunnel junctions into devices for magnetic field sensing are discussed.


2008 ◽  
Vol 57 (11) ◽  
pp. 7221
Author(s):  
Du Jian ◽  
Zhang Peng ◽  
Liu Ji-Hong ◽  
Li Jin-Liang ◽  
Li Yu-Xian

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-23
Author(s):  
L. Saminadayar ◽  
A. Kumar ◽  
D. C. Glattli ◽  
Y. Jin ◽  
B. Etienne
Keyword(s):  

2020 ◽  
Vol 13 (8) ◽  
pp. 083005
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Kohei Okamoto ◽  
Nguyen Thanh Tu ◽  
Masaaki Tanaka

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