Rashba spin-orbit effect on spin-tunneling time in a ferromagnetic∕semiconductor∕ferromagnetic heterojunction with a tunnel barrier

2006 ◽  
Vol 99 (1) ◽  
pp. 013907 ◽  
Author(s):  
Ying-Tao Zhang ◽  
You-Cheng Li
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Orbit ◽  
Spin Tunneling ◽  
Rashba Spin

Rashba Spin-Orbit Effect on Traversal Time in Parabolic-Well Magnetic Tunneling Junction

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang
Keyword(s):  
Orbit Interaction ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Orbit ◽  
Tunneling Junction ◽  
Spin Orbit Interaction ◽  
Spin Tunneling ◽  
Rashba Spin ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

scholarly journals Spin-tunneling time and transport in a ferromagnetic/semiconductor/ferromagnetic heterojunction with a δ tunnel barrier

2008 ◽  
Vol 57 (11) ◽  
pp. 7221
Author(s):  
Du Jian ◽  
Zhang Peng ◽  
Liu Ji-Hong ◽  
Li Jin-Liang ◽  
Li Yu-Xian
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Tunneling

Rashba spin-orbit effect on tunneling time in graphene superlattice

2012 ◽  
Vol 111 (9) ◽  
pp. 093724 ◽  
Author(s):  
Edris Faizabadi ◽  
Farhad Sattari
Keyword(s):  
Tunneling Time ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Graphene Superlattice

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction

2003 ◽  
Vol 93 (9) ◽  
pp. 5316-5320 ◽  
Author(s):  
Han-Chun Wu ◽  
Yong Guo ◽  
Xin-Yi Chen ◽  
Bing-Lin Gu
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Spin Orbit ◽  
Traversal Time ◽  
Rashba Spin
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