scholarly journals Spin-tunneling time and transport in a ferromagnetic/semiconductor/ferromagnetic heterojunction with a δ tunnel barrier

2008 ◽  
Vol 57 (11) ◽  
pp. 7221
Author(s):  
Du Jian ◽  
Zhang Peng ◽  
Liu Ji-Hong ◽  
Li Jin-Liang ◽  
Li Yu-Xian
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Tunneling

Rashba Spin-Orbit Effect on Traversal Time in Parabolic-Well Magnetic Tunneling Junction

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang
Keyword(s):  
Orbit Interaction ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Orbit ◽  
Tunneling Junction ◽  
Spin Orbit Interaction ◽  
Spin Tunneling ◽  
Rashba Spin ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

2001 ◽  
Vol 23 (4) ◽  
pp. 509-513 ◽  
Author(s):  
Y. Guo ◽  
B. Wang ◽  
B.-L. Gu ◽  
Y. Kawazoe
Keyword(s):  
Tunneling Time ◽  
Spin Tunneling

Spin-tunneling time in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer

2001 ◽  
Vol 291 (6) ◽  
pp. 453-458 ◽  
Author(s):  
Yong Guo ◽  
Bin Wang ◽  
Bing-Lin Gu ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Tunneling Time ◽  
Spin Tunneling ◽  
Semiconductor Heterostructure

Transport and magnetic properties of co-doped ferromagnetic semiconductor (In,Fe,Mn)As

2020 ◽  
Vol 13 (8) ◽  
pp. 083005
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Kohei Okamoto ◽  
Nguyen Thanh Tu ◽  
Masaaki Tanaka
Keyword(s):  
Magnetic Properties ◽  
Ferromagnetic Semiconductor ◽  
Co Doped

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

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