Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

2005 ◽  
Vol 97 (11) ◽  
pp. 116106 ◽  
Author(s):  
Yue-Min Wan ◽  
Kuo-Dong Huang ◽  
S. F. Hu ◽  
C. L. Sung ◽  
Y. C. Chou
Keyword(s):  
Coulomb Blockade ◽  
Gate Oxide ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

Analysis and Simulation of Coulomb Blockade and Coulomb Diamonds in Fullerene Single Electron Transistors

2018 ◽  
Vol 13 (1) ◽  
pp. 138-143 ◽  
Author(s):  
Vahideh Khadem Hosseini ◽  
Mohammad Taghi Ahmadi ◽  
Saeid Afrang ◽  
Razali Ismail
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single Charge Electronics with Gold Nanoparticles and Organic Monolayers

2016 ◽  
Vol 1817 ◽  
Author(s):  
O. Pluchery ◽  
L. Caillard ◽  
A. Rynder ◽  
F. Rochet ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Coulomb Blockade ◽  
Electrical Current ◽  
Single Electron ◽  
Organic Monolayers ◽  
Single Electron Transistors ◽  
Core Element ◽  
Organic Monolayer ◽  
Electrical Materials ◽  
Electron Transistors

ABSTRACTGold nanoparticles can be used as ultimate electrical materials for storing electrons or controlling their flow for the next generation nano-electronic devices. These particles are the core element of assemblies where the electrical current is reduced to the smallest possible since electrons are controlled one by one by using the Coulomb blockade phenomenon. We prepared colloidal gold nanoparticles beteween 4 and 15 nm and grafted them on a grafted organic monolayer (GOM) on silicon. GOM are highly ordered monolayers prepared by hydrosilylation of alkene molecules and subsequently modified with an amine group so that gold nanoparticles can be firmly immobilized on top of the layer. We discuss several electrical properties at a single electron level. Using the conductive tip of KPFM, we were also able to reveal the spontaneous charging behavior of the gold nanoparticles so that the local work function of a 10 nm gold nanoparticle is only 3.7 eV. By placing an STM tip above a nanoparticle, Coulomb blockade allows controlling the number of electrons simultaneously injected in the nanoparticle. This opens the way for new kinds of single electron memories or single electron transistors.

Ferromagnetic Single-Electron Transistor with RC Gate

2002 ◽  
Vol 746 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Yasushi Takemura
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Tunnel Magnetoresistance ◽  
In Series ◽  
Gate Potential ◽  
Macroscopic Quantum Tunneling ◽  
Charge States ◽  
Gate Resistance ◽  
Electron Transistors

ABSTRACTFerromagnetic single-electron transistors coupled to the controlling gate potential by the gate resistance and gate capacitance in series are studied quantitatively. In this type of the device, several metastable charge states are possible within the Coulomb blockade range. The enhancement and hysteresis of tunnel magnetoresistance on drain and gate voltages are predicted. Inelastic macroscopic quantum tunneling of charge and existence of several charge states play an important role for the unique behavior of the tunnel magnetoresistance. This implies that RC-coupled ferromagnetic single-electron transistors have a new functionality as novel magnetoresistive nanostructure devices.

Room temperature Coulomb blockade effects in Au nanocluster/pentacene single electron transistors

2015 ◽  
Vol 26 (35) ◽  
pp. 355204 ◽  
Author(s):  
Haisheng Zheng ◽  
Mohamed Asbahi ◽  
Somik Mukherjee ◽  
Cherian J Mathai ◽  
Keshab Gangopadhyay ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

High-Temperature Coulomb Blockade

2009 ◽  
Vol 4 (2) ◽  
pp. 53-57
Author(s):  
Artur Pogosov ◽  
Maxim Budantsev ◽  
Andrey Shevyrin ◽  
Alexey Plotnikov ◽  
Ashat Bakarov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Degrees Of Freedom ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Coulomb Gap ◽  
Before And After ◽  
High Dielectric ◽  
Electron Transistors ◽  
Typical Temperature

The Coulomb blockade effect is studied in a single-electron transistor – quantum dot, separated from source and drain areas by tunnel junctions. Peculiarity of the transistor is that it is made on the basis of semiconducting membrane, separated from the suffer. Separating the transistor from the suffer having high dielectric constant leads to the drastic decrease in the quantum dot capacity С and, therefore, to the increase in the Coulomb gap 2 e C/ . This value is important since it determines the upper limit of the transistor working temperature. A direct comparison of the Coulomb gaps before and after separating from the suffer shows that it increases from 40 K (in temperature units) for conventional transistor to 150 K for the «suspended» one. High value of the Coulomb gap has made it possible to observe clear diamond-like structure of condactance dependence on the gate and source-drain voltages, specific for the Coulomb blockade, while typical temperature of this kind of measurements on conventional single-electron transistors is about hundreds of millikelvins. An additional blockade effect, different from the conventional Coulomb blockade is observed. The nature of this effect can be connected with additional mechanical degrees of freedom of the transistor (elastic deformations).

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