scholarly journals Method for Simulating the Thickness Distribution of a Cubic Boron Nitride Film Deposited on a Curved Substrate using Ion-beam-assisted Vapor Deposition

2012 ◽  
Vol 32 ◽  
pp. 831-839 ◽  
Author(s):  
T. Kobayashi ◽  
R. Valizadeh ◽  
J.S. Colligon ◽  
H. Kanematsu ◽  
K. Morisato
1993 ◽  
Vol 228 (1-2) ◽  
pp. 97-99 ◽  
Author(s):  
M. Sueda ◽  
T. Kobayashi ◽  
H. Tsukamoto ◽  
T. Rokkaku ◽  
S. Morimoto ◽  
...  

1991 ◽  
Vol 223 ◽  
Author(s):  
Z. Xia ◽  
G. L. Zhang ◽  
W. L. Lin

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.


2002 ◽  
Vol 167 (2) ◽  
pp. 420-424
Author(s):  
P.W. Zhu ◽  
Y.N. Zhao ◽  
B. Wang ◽  
Z. He ◽  
D.M. Li ◽  
...  

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1138-1145 ◽  
Author(s):  
Takeo Oku ◽  
Kenji Hiraga ◽  
Toshitsugu Matsuda ◽  
Toshio Hirai ◽  
Makoto Hirabayashi

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