Investigation on bias stress effects in n-type PDI8-CN2 thin-film transistors

2012 ◽  
Vol 13 (11) ◽  
pp. 2281-2289 ◽  
Author(s):  
F.V. Di Girolamo ◽  
F. Ciccullo ◽  
M. Barra ◽  
A. Carella ◽  
A. Cassinese
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stress Effects ◽  
Bias Stress

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 088502
Author(s):  
Chao-Yang Han ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Ya-Yi Chen ◽  
Li Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Noise Characteristics ◽  
P Type ◽  
Si Thin Film

Bias Stress Effects on Different Dielectric Surfaces of Pentacene Thin-Film Transistors

2011 ◽  
Vol 11 (5) ◽  
pp. 4338-4342 ◽  
Author(s):  
Gun Woo Hyung ◽  
Ja-Ryong Koo ◽  
Ji Hoon Seo ◽  
Jin Woo Yang ◽  
Ho Won Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stress Effects ◽  
Bias Stress ◽  
Dielectric Surfaces

Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044506 ◽  
Author(s):  
Tse Nga Ng ◽  
Jürgen H. Daniel ◽  
Sanjiv Sambandan ◽  
Ana-Claudia Arias ◽  
Michael L. Chabinyc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Stress Effects ◽  
Bias Stress ◽  
Gate Bias Stress

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

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