Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric

2007 ◽  
Vol 28 (10) ◽  
pp. 874-876 ◽  
Author(s):  
Tae Ho Kim ◽  
Chung Kun Song ◽  
Jin Seong Park ◽  
Min Chul Suh
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Stress Effects ◽  
Bias Stress ◽  
Constant Bias

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 088502
Author(s):  
Chao-Yang Han ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Ya-Yi Chen ◽  
Li Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Noise Characteristics ◽  
P Type ◽  
Si Thin Film

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

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