scholarly journals Bias Stress Effects in Organic Thin Film Transistors

2007 ◽  
Author(s):  
Tse Nga Ng ◽  
Michael L. Chabinyc ◽  
Robert A. Street ◽  
Alberto Salleo
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Stress Effects ◽  
Bias Stress

Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044506 ◽  
Author(s):  
Tse Nga Ng ◽  
Jürgen H. Daniel ◽  
Sanjiv Sambandan ◽  
Ana-Claudia Arias ◽  
Michael L. Chabinyc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Stress Effects ◽  
Bias Stress ◽  
Gate Bias Stress

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGG08
Author(s):  
Kunihiro Oshima ◽  
Michihiro Shintani ◽  
Kazunori Kuribara ◽  
Yasuhiro Ogasahara ◽  
Takashi Sato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Degradation Model ◽  
Bias Stress ◽  
Stress Degradation

scholarly journals Bias-Stress Effect in Pentacene Organic Thin-Film Transistors

2010 ◽  
Vol 57 (5) ◽  
pp. 1003-1008 ◽  
Author(s):  
Kevin Kyungbum Ryu ◽  
Ivan Nausieda ◽  
David Da He ◽  
Akintunde Ibitayo Akinwande ◽  
Vladimir Bulovic ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Stress Effect ◽  
Organic Thin Film ◽  
Bias Stress

Effect of molecular structure on bias stress effect in organic thin-film transistors

2011 ◽  
Vol 257 (22) ◽  
pp. 9386-9389 ◽  
Author(s):  
A.K. Diallo ◽  
F. Fages ◽  
F. Serein-Spirau ◽  
J.-P. Lère-porte ◽  
C. Videlot-Ackermann
Keyword(s):  
Molecular Structure ◽  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Stress Effect ◽  
Organic Thin Film ◽  
Bias Stress

Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

2019 ◽  
Vol 40 (12) ◽  
pp. 1941-1944 ◽  
Author(s):  
Hong-Chih Chen ◽  
Yu-Ching Tsao ◽  
An-Kuo Chu ◽  
Hui-Chun Huang ◽  
Wei-Chih Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Bias-stress stability of low-voltage p-channel and n-channel organic thin-film transistors on flexible plastic substrates

2014 ◽  
Vol 15 (11) ◽  
pp. 3173-3182 ◽  
Author(s):  
Sibani Bisoyi ◽  
Ute Zschieschang ◽  
Myeong Jin Kang ◽  
Kazuo Takimiya ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Plastic Substrates ◽  
Bias Stress

Bias-stress induced instability of organic thin film transistors

1999 ◽  
Vol 102 (1-3) ◽  
pp. 998-999 ◽  
Author(s):  
M. Matters ◽  
D.M. de Leeuw ◽  
P.T. Herwig ◽  
A.R. Brown
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bias Stress
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