Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044506 ◽  
Author(s):  
Tse Nga Ng ◽  
Jürgen H. Daniel ◽  
Sanjiv Sambandan ◽  
Ana-Claudia Arias ◽  
Michael L. Chabinyc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Stress Effects ◽  
Bias Stress ◽  
Gate Bias Stress

Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

2019 ◽  
Vol 40 (12) ◽  
pp. 1941-1944 ◽  
Author(s):  
Hong-Chih Chen ◽  
Yu-Ching Tsao ◽  
An-Kuo Chu ◽  
Hui-Chun Huang ◽  
Wei-Chih Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

scholarly journals Molecular doping for control of gate bias stress in organic thin film transistors

2014 ◽  
Vol 104 (1) ◽  
pp. 013507 ◽  
Author(s):  
Moritz P. Hein ◽  
Alexander A. Zakhidov ◽  
Björn Lüssem ◽  
Jens Jankowski ◽  
Max L. Tietze ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Bias Stress ◽  
Molecular Doping ◽  
Gate Bias Stress

Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGG08
Author(s):  
Kunihiro Oshima ◽  
Michihiro Shintani ◽  
Kazunori Kuribara ◽  
Yasuhiro Ogasahara ◽  
Takashi Sato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Bias ◽  
Organic Thin Film ◽  
Degradation Model ◽  
Bias Stress ◽  
Stress Degradation

Reverse DC bias stress shifts in organic thin-film transistors with gate dielectrics using parylene-C

2012 ◽  
Vol 209 (10) ◽  
pp. 2073-2077 ◽  
Author(s):  
Kenjiro Fukuda ◽  
Tatsuya Suzuki ◽  
Daisuke Kumaki ◽  
Shizuo Tokito
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Parylene C ◽  
Bias Stress ◽  
Dc Bias

scholarly journals Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Bias Stress

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress
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