Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1661-1665 ◽  
Author(s):  
A. Mavinkurve ◽  
L. Goumans ◽  
G.M. O’Halloran ◽  
R.T.H. Rongen ◽  
M.-L. Farrugia
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
Reliability Evaluation ◽  
Storage Life ◽  
High Temperature Storage ◽  
Interconnect Reliability ◽  
Temperature Storage

High Temperature Storage Reliability of Bond Resistance of Palladium-Coated Copper Ball Bonds

2017 ◽  
Vol 2017 (1) ◽  
pp. 000432-000437 ◽  
Author(s):  
Michael David Hook ◽  
Michael Mayer ◽  
Stevan Hunter
Keyword(s):  
High Temperature ◽  
Ball Bond ◽  
Wire Bonds ◽  
High Temperature Storage ◽  
Ball Bonding ◽  
Ball Bonds ◽  
Bond Pads ◽  
Wire Resistance ◽  
Temperature Storage

Abstract Reliability of wire bonds made with palladium-coated copper (PCC) wire of 25 μm diameter is studied by measuring the wire bond resistance increase over time in high temperature storage at 225 °C. Ball bonds are made on two bond pad thicknesses and tested with and without mold compound encapsulation. Bond pads are aluminum copper (Al-0.5%Cu), 800 nm and 3000 nm thick. The wirebonding pattern is arranged to facilitate 4-wire resistance measurements of 12 bond pairs in each 28-pin ceramic test package. The ball bonding recipe is optimized to minimize splash on 3000 nm Al-0.5%Cu with shear strength at least 120 MPa. Ball bond diameter is 61 μm and height is 14 μm. Measurements include bond shear test data and in-situ resistance before and during high temperature storage. Bonds on 3000 nm pads are found to be significantly more reliable than bonds on 800 nm pads within 140 h of aging.

High temperature storage reliability of palladium coated copper wire in different EFO current settings

2018 ◽  
Vol 80 ◽  
pp. 1-6
Author(s):  
Pi-Ying Cheng ◽  
Po-Ying Lai ◽  
Jiun-Ming Ye ◽  
Tsung-Chia Chen ◽  
Cheng-Li Hsieh
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
High Temperature Storage ◽  
Temperature Storage

A mechanism of threshold voltage changes for WNx gate GaAs MESFETs in high temperature storage life tests

1995 ◽  
Vol 35 (12) ◽  
pp. 1515-1520 ◽  
Author(s):  
Y. Kitaura ◽  
K. Ishida ◽  
T. Mizoguchi ◽  
N. Uchitomi ◽  
T. Matsunaga ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Storage Life ◽  
High Temperature Storage ◽  
Life Tests ◽  
Temperature Storage
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