Impact of palladium to the interfacial behavior of palladium coated copper wire on aluminium pad metallization during high temperature storage

2011 ◽  
Author(s):  
Dominik Stephan ◽  
Effie Chew ◽  
Johnny Yeung ◽  
Eugen Milke
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
Interfacial Behavior ◽  
High Temperature Storage ◽  
Temperature Storage

High temperature storage reliability of palladium coated copper wire in different EFO current settings

2018 ◽  
Vol 80 ◽  
pp. 1-6
Author(s):  
Pi-Ying Cheng ◽  
Po-Ying Lai ◽  
Jiun-Ming Ye ◽  
Tsung-Chia Chen ◽  
Cheng-Li Hsieh
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
High Temperature Storage ◽  
Temperature Storage

Micro-Structural Studies of Thermosonic Cu-Al Bonding Interface

2014 ◽  
Vol 925 ◽  
pp. 154-158 ◽  
Author(s):  
T. Joseph Sahaya Anand ◽  
Chua Kok Yau ◽  
A. Jalar
Keyword(s):  
High Temperature ◽  
Grain Boundary ◽  
Copper Wire ◽  
Semiconductor Industry ◽  
Void Formation ◽  
Scanning Transmission Electron Microscope ◽  
Layer Growth ◽  
Bonding Interface ◽  
High Temperature Storage ◽  
Temperature Storage

Thermosonic Copper (Cu) wire interconnection has been under an extensive research and development to replace expensive Gold (Au) wire material in the semiconductor industry. However, a reliability concern is raised due to void formation at the bonding interface of Copper wire-Aluminum bond pad (Cu-Al) after High Temperature Storage (HTS) annealing condition. It is believed that the Intermetallic Compound (IMC) layer growth and evolution lead to a volumetric shrinkage which in turn results in the void formation. Annealing conditions influence the development of the IMC at the bonding interface which is related to the bonding reliability. In this work, the effects of annealing toward the micro-structure and IMC growth at the bonding interface were evaluated using Scanning Transmission Electron Microscope equipped with Energy Dispersive X-ray analysis. In the as-synthesized sample bonded at 100°C, an inhomogeneous IMC formation dominated by grain boundary diffusion was observed. After High Temperature Storage of 1000 hours, the consumption of the Al bond pad resulted in the formation of irregular IMC layers. The variation of phases existed in a localized region was believed due to simultaneous growth of IMC by both grain boundary and volume diffusions. Moreover, the diffusion of Cu into Si was observed. This resulted in the formation of the mixture of Si + η phases in the affected sea region.

Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1661-1665 ◽  
Author(s):  
A. Mavinkurve ◽  
L. Goumans ◽  
G.M. O’Halloran ◽  
R.T.H. Rongen ◽  
M.-L. Farrugia
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
Reliability Evaluation ◽  
Storage Life ◽  
High Temperature Storage ◽  
Interconnect Reliability ◽  
Temperature Storage

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage
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