An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

2006 ◽  
Vol 37 (11) ◽  
pp. 1339-1346 ◽  
Author(s):  
Sona P. Kumar ◽  
Anju Agrawal ◽  
Sneha Kabra ◽  
Mridula Gupta ◽  
R.S. Gupta
Keyword(s):  
Velocity Field ◽  
Field Dependence ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Frequency ◽  
High Power Microwave ◽  
Effect Transistor ◽  
Power Microwave

High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

1998 ◽  
Vol 19 (2) ◽  
pp. 44-46 ◽  
Author(s):  
Q. Chen ◽  
J.W. Yang ◽  
R. Gaska ◽  
M.A. Khan ◽  
M.S. Shur ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Power Microwave ◽  
Effect Transistor ◽  
Power Microwave

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

2019 ◽  
Vol 40 (7) ◽  
pp. 1048-1051 ◽  
Author(s):  
Josephine Chang ◽  
Shamima Afroz ◽  
Ken Nagamatsu ◽  
Kevin Frey ◽  
Sarat Saluru ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Rf Amplifier ◽  
Super Lattice ◽  
Effect Transistor
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