An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

2007 ◽  
Author(s):  
Ruchika Aggarwal ◽  
Mridula Gupta ◽  
R. S. Gupta ◽  
Anju Agrawal
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Current Model ◽  
Drain Current ◽  
Metal Insulator ◽  
High Power Microwave ◽  
Semiconductor Heterostructure ◽  
Effect Transistor ◽  
Microwave Applications ◽  
Power Microwave

High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

1998 ◽  
Vol 19 (2) ◽  
pp. 44-46 ◽  
Author(s):  
Q. Chen ◽  
J.W. Yang ◽  
R. Gaska ◽  
M.A. Khan ◽  
M.S. Shur ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Power Microwave ◽  
Effect Transistor ◽  
Power Microwave
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