scholarly journals Electric field dependence of charge carrier hopping transport within the random energy landscape in an organic field effect transistor

2012 ◽  
Vol 86 (4) ◽  
Author(s):  
I. I. Fishchuk ◽  
A. Kadashchuk ◽  
Mujeeb Ullah ◽  
H. Sitter ◽  
A. Pivrikas ◽  
...  
2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


1994 ◽  
Vol 50 (10) ◽  
pp. 7007-7015 ◽  
Author(s):  
M. Singh ◽  
Y. Tarutani ◽  
U. Kabasawa ◽  
K. Takagi

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