scholarly journals Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si

2005 ◽  
Author(s):  
Ching-Fuh Lin ◽  
Miin-Jang Chen ◽  
Eih-Zhe Liang ◽  
W.T. Liu ◽  
S.T. Chang ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

Dynamics of Metal-SiOx and SiOx–Si Interfaces and the Associated Instabilities In Practical Metal/Insulator/Semiconductor Structures

1982 ◽  
Vol 18 ◽  
Author(s):  
G. Rajeswaran ◽  
W. A. Anderson ◽  
M. Jackson ◽  
M. Thayer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Quantitative Information ◽  
Charge Balance ◽  
Oxide Interface ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Barrier Heights ◽  
Thickness Variations ◽  
Mis Structures

X-ray photoelectron spectroscopy, Auger electron spectroscopy and ellipsometry measurements were performed at Cr-SiOx, and Yb-SiOx interfaces, which are being considered for metal/insulator/semiconductor (MIS) solar cell applications. These measurements have led to a knowledge of instability mechanisms associated with MIS solar cells. The dynamics of the metal-oxide interface reduce the effective thickness of the insulating SiOx layer. Typically, in a 3 week period after fabrication the oxide thickness decreases by about 2 Å for ytterbium MIS structures and by less than 1 Å for chromium MIS structures. A structural equilibrium is reached thereafter. To explore further the dependence of MIS Schottky barrier heights on oxide thickness variations (from about 5 to 20 Å) a comprehensive charge balance analysis was performed at a general MIS interface. This theoretical study supports experimental data on barrier heights and also on instabilities. In addition, the application of the theoretical model to the experimental barrier heights has yielded quantitative information regarding the density of interface states at the SiOx,–Si interface.

Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures

2001 ◽  
Vol 35 (9) ◽  
pp. 1063-1071 ◽  
Author(s):  
G. L. Kuryshev ◽  
A. P. Kovchavtsev ◽  
N. A. Valisheva
Keyword(s):  
Electronic Properties ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Detection of Copper and Water in Low-k Dielectrics by Triangular Voltage Sweep Measurements

2006 ◽  
Vol 914 ◽  
Author(s):  
Ivan Ciofi ◽  
Zsolt Tökei ◽  
Marco Saglimbeni ◽  
Marleen Van Hove
Keyword(s):  
Ionic Species ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Sweep ◽  
Low K ◽  
Cu Ions ◽  
Mis Structures

AbstractMetal-Insulator-Semiconductor (MIS) planar capacitors were fabricated in order to systematically investigate the effect of Cu and water in Cu/low-k structures by Triangular Voltage Sweep (TVS) measurements. We were able to resolve peculiar features in the TVS traces of Cu and water contaminated samples, which were related to Cu ions and protons, respectively. We demonstrate that these features can be used to distinguish the two ionic species. As these features do not depend on the specific dielectric, we provide a methodology to detect and distinguish Cu and water in porous low-k materials embedded in MIS structures.

scholarly journals Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

2019 ◽  
Vol 125 (8) ◽  
pp. 084501 ◽  
Author(s):  
Rainer Schmidt ◽  
Patrick Mayrhofer ◽  
Ulrich Schmid ◽  
Achim Bittner
Keyword(s):  
Impedance Spectroscopy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

scholarly journals Влияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te

2021 ◽  
Vol 47 (4) ◽  
pp. 33
Author(s):  
А.В. Войцеховский ◽  
С.Н. Несмелов ◽  
С.М. Дзядух ◽  
В.С. Варавин ◽  
С.А. Дворецкий ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface States ◽  
Surface Layers ◽  
Metal Insulator ◽  
Near Surface ◽  
Metal Insulator Semiconductor ◽  
Wide Gap ◽  
Mis Structures

Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

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