A specific floating-body effect in fully depleted SOI MOSFETs with ultra-thin gate oxide

2004 ◽  
Vol 72 (1-4) ◽  
pp. 352-356 ◽  
Author(s):  
M Cassé ◽  
J Prétet ◽  
S Cristoloveanu ◽  
T Poiroux ◽  
C Raynaud ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Floating Body ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect ◽  
Thin Gate Oxide

scholarly journals Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

2008 ◽  
Vol 3 (2) ◽  
pp. 91-95
Author(s):  
Paula G. D. Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Electrical Measurements ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
Soi Technology

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

2009 ◽  
Vol 53 (2) ◽  
pp. 150-153 ◽  
Author(s):  
K.-I. Na ◽  
S. Cristoloveanu ◽  
Y.-H. Bae ◽  
P. Patruno ◽  
W. Xiong ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect

SHORT CHANNEL, FLOATING BODY, AND 3D COUPLING EFFECTS IN TRIPLE-GATE MOSFET

2008 ◽  
Vol 18 (04) ◽  
pp. 773-782 ◽  
Author(s):  
KYOUNG-IL NA ◽  
JUNG-HEE LEE ◽  
SORIN CRISTOLOVEANU ◽  
YOUNG-HO BAE ◽  
PAUL PATRUNO ◽  
...  
Keyword(s):  
Coupling Effect ◽  
Three Dimensional ◽  
Floating Body ◽  
Short Channel ◽  
Body Effect ◽  
Back Gate ◽  
Fully Depleted ◽  
Floating Body Effect ◽  
Simultaneous Activation ◽  
Dimensional Coupling

We have investigated the short-channel effect (SCE), floating-body effect, and three-dimensional coupling effect in triple-gate MOSFET with various fin widths, gate lengths and number of fins. It is found that the SCE of these devices is alleviated as the fin width shrinks and does not depend on the number of fins. The gate-induced floating-body effect (GIFBE) is visible even in fully depleted (FD) triple-gate transistors when the film-buried oxide (BOX) interface is swept from depletion to accumulation by the back-gate bias. The 3-D coupling effect in vertical, lateral, and longitudinal directions was investigated for different channel geometries. The biasing condition which enables the simultaneous activation of all channels and gives rise to volume inversion is discussed.

The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

2019 ◽  
Vol 9 (1) ◽  
pp. 305-311
Author(s):  
Paula G. Der Agopian ◽  
Joao A. Martino ◽  
E. Simoen ◽  
C. Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Reduction ◽  
Floating Body ◽  
Body Effect ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
The Impact
Sign in / Sign up

Export Citation Format

Share Document