scholarly journals Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

2014 ◽  
Vol 61 (2) ◽  
pp. 333-341 ◽  
Author(s):  
Siau Ben Chiah ◽  
Xing Zhou
Keyword(s):  
Floating Body ◽  
Regional Modeling ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

2009 ◽  
Vol 53 (2) ◽  
pp. 150-153 ◽  
Author(s):  
K.-I. Na ◽  
S. Cristoloveanu ◽  
Y.-H. Bae ◽  
P. Patruno ◽  
W. Xiong ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect

SHORT CHANNEL, FLOATING BODY, AND 3D COUPLING EFFECTS IN TRIPLE-GATE MOSFET

2008 ◽  
Vol 18 (04) ◽  
pp. 773-782 ◽  
Author(s):  
KYOUNG-IL NA ◽  
JUNG-HEE LEE ◽  
SORIN CRISTOLOVEANU ◽  
YOUNG-HO BAE ◽  
PAUL PATRUNO ◽  
...  
Keyword(s):  
Coupling Effect ◽  
Three Dimensional ◽  
Floating Body ◽  
Short Channel ◽  
Body Effect ◽  
Back Gate ◽  
Fully Depleted ◽  
Floating Body Effect ◽  
Simultaneous Activation ◽  
Dimensional Coupling

We have investigated the short-channel effect (SCE), floating-body effect, and three-dimensional coupling effect in triple-gate MOSFET with various fin widths, gate lengths and number of fins. It is found that the SCE of these devices is alleviated as the fin width shrinks and does not depend on the number of fins. The gate-induced floating-body effect (GIFBE) is visible even in fully depleted (FD) triple-gate transistors when the film-buried oxide (BOX) interface is swept from depletion to accumulation by the back-gate bias. The 3-D coupling effect in vertical, lateral, and longitudinal directions was investigated for different channel geometries. The biasing condition which enables the simultaneous activation of all channels and gives rise to volume inversion is discussed.

Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

2004 ◽  
Vol 48 (7) ◽  
pp. 1243-1247 ◽  
Author(s):  
M. Cassé ◽  
J. Pretet ◽  
S. Cristoloveanu ◽  
T. Poiroux ◽  
C. Fenouillet-Beranger ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Back Gate ◽  
Fully Depleted ◽  
Floating Body Effect

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

2008 ◽  
Vol 52 (11) ◽  
pp. 1751-1754 ◽  
Author(s):  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Floating Body ◽  
Temperature Influence ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect

A specific floating-body effect in fully depleted SOI MOSFETs with ultra-thin gate oxide

2004 ◽  
Vol 72 (1-4) ◽  
pp. 352-356 ◽  
Author(s):  
M Cassé ◽  
J Prétet ◽  
S Cristoloveanu ◽  
T Poiroux ◽  
C Raynaud ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Floating Body ◽  
Body Effect ◽  
Fully Depleted ◽  
Floating Body Effect ◽  
Thin Gate Oxide
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