III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

2017 ◽  
pp. 121-166 ◽  
Author(s):  
T. Detchprohm ◽  
X. Li ◽  
S.-C. Shen ◽  
P.D. Yoder ◽  
R.D. Dupuis
Keyword(s):  
Wide Bandgap ◽  
Deep Ultraviolet ◽  
Ultraviolet Lasers

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

scholarly journals Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Level ◽  
Electronic Devices ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Wide Bandgap ◽  
Trap Level ◽  
Characteristic Peak ◽  
Deep Ultraviolet

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.

Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition

2021 ◽  
Author(s):  
Yuri Ogura ◽  
Yuta Arata ◽  
Hiroyuki NISHINAKA ◽  
Masahiro YOSHIMOTO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
X Ray Diffraction ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Phase Crystal ◽  
Deep Ultraviolet

Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In x Ga1−x )2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In x Ga1−x )2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga1−x )2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.

Sensitive Deep Ultraviolet Photodetector and Image Sensor Composed of Inorganic Lead-Free Cs3Cu2I5 Perovskite with Wide Bandgap

2019 ◽  
Vol 10 (18) ◽  
pp. 5343-5350 ◽  
Author(s):  
Zhi-Xiang Zhang ◽  
Chen Li ◽  
Yu Lu ◽  
Xiao-Wei Tong ◽  
Feng-Xia Liang ◽  
...  
Keyword(s):  
Image Sensor ◽  
Wide Bandgap ◽  
Lead Free ◽  
Ultraviolet Photodetector ◽  
Inorganic Lead ◽  
Deep Ultraviolet

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

2020 ◽  
Vol 32 (12) ◽  
pp. 1908242 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Shifeng Qian ◽  
Chujun Yin ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Large Scale ◽  
Wide Bandgap ◽  
Deep Ultraviolet

scholarly journals Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

RSC Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 1394-1402 ◽  
Author(s):  
Xu Han ◽  
Shuanglong Feng ◽  
Yiming Zhao ◽  
Lei Li ◽  
Zhaoyao Zhan ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Fourth Generation ◽  
Ternary Oxide ◽  
Uv Photodetector ◽  
Ultraviolet Detection ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nanowire Networks ◽  
Uv C

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.

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