Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics
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Published By Elsevier

9780128095843

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III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.09.001 ◽

2017 ◽

pp. 121-166 ◽

Cited By ~ 9

Author(s):

T. Detchprohm ◽

X. Li ◽

S.-C. Shen ◽

P.D. Yoder ◽

R.D. Dupuis

Keyword(s):

Wide Bandgap ◽

Deep Ultraviolet ◽

Ultraviolet Lasers

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Contents of Volumes in this Series

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/s0080-8784(16)30047-3 ◽

2017 ◽

pp. 447-474

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Materials Challenges of AlGaN-Based UV Optoelectronic Devices

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.11.001 ◽

2017 ◽

pp. 3-44 ◽

Cited By ~ 7

Author(s):

M.H. Crawford

Keyword(s):

Optoelectronic Devices

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Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.05.001 ◽

2017 ◽

pp. 167-199 ◽

Cited By ~ 8

Author(s):

S. Zhao ◽

Z. Mi

Keyword(s):

Deep Ultraviolet

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Contributors

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/s0080-8784(16)30040-0 ◽

2017 ◽

pp. ix-xi

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Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.09.002 ◽

2017 ◽

pp. 341-384 ◽

Cited By ~ 3

Author(s):

S. Gwo ◽

Y.J. Lu ◽

H.W. Lin ◽

C.T. Kuo ◽

C.L. Wu ◽

...

Keyword(s):

White Light ◽

Full Color ◽

Nitride Semiconductor

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Development of Deep UV LEDs and Current Problems in Material and Device Technology

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.08.002 ◽

2017 ◽

pp. 45-83 ◽

Cited By ~ 9

Author(s):

M. Shatalov ◽

R. Jain ◽

T. Saxena ◽

A. Dobrinsky ◽

M. Shur

Keyword(s):

Deep Uv ◽

Uv Leds ◽

Device Technology

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Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.08.004 ◽

2017 ◽

pp. 203-229 ◽

Cited By ~ 2

Author(s):

T. Auzelle ◽

B. Daudin

Keyword(s):

Structural Characterization

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Preface

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/s0080-8784(16)30041-2 ◽

2017 ◽

pp. xiii-xiv ◽

Cited By ~ 1

Author(s):

Zetian Mi ◽

Chennupati Jagadish

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Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics ◽

10.1016/bs.semsem.2016.08.003 ◽

2017 ◽

pp. 231-266 ◽

Cited By ~ 2

Author(s):

S. Albert ◽

A.M. Bengoechea-Encabo ◽

M.Á. Sánchez-García ◽

E. Calleja

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth

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Semiconductors and Semimetals - III-Nitride Semiconductor OptoelectronicsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Elsevier

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

Contents of Volumes in this Series

Materials Challenges of AlGaN-Based UV Optoelectronic Devices

Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics

Contributors

Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications

Development of Deep UV LEDs and Current Problems in Material and Device Technology

Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires

Preface

Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Semiconductors and Semimetals - III-Nitride Semiconductor Optoelectronics
Latest Publications