Sensitive Deep Ultraviolet Photodetector and Image Sensor Composed of Inorganic Lead-Free Cs3Cu2I5 Perovskite with Wide Bandgap

2019 ◽  
Vol 10 (18) ◽  
pp. 5343-5350 ◽  
Author(s):  
Zhi-Xiang Zhang ◽  
Chen Li ◽  
Yu Lu ◽  
Xiao-Wei Tong ◽  
Feng-Xia Liang ◽  
...  
Keyword(s):  
Image Sensor ◽  
Wide Bandgap ◽  
Lead Free ◽  
Ultraviolet Photodetector ◽  
Inorganic Lead ◽  
Deep Ultraviolet

Electrically Adjusted Deep-Ultraviolet/Near-Infrared Single-Band/Dual-Band Imaging Photodetectors Based on Cs3Cu2I5/PdTe2/Ge Multiheterostructures

2021 ◽  
Author(s):  
Chao Xie ◽  
Yi Liang ◽  
Chengyun Dong ◽  
Xiaowei Tong ◽  
Wenhua Yang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Single Band ◽  
Research Interest ◽  
Lead Free ◽  
Dual Band ◽  
Inorganic Lead ◽  
Deep Ultraviolet

Multispectral photodetection has garnered enormous research interest and is always challenging to date. Here, we present the realization of an electrically adjusted single-band/dual-band photodetector based on an inorganic lead-free halide...

Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film

2016 ◽  
Vol 879 ◽  
pp. 1117-1122 ◽  
Author(s):  
Yu Bo Li ◽  
Jian Wei Zhong ◽  
Li Ming Zhou ◽  
Chao Lun Sun ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Blind Detection ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Uv Response

Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.

All‐Inorganic Lead‐Free Perovskite(‐Like) Single Crystals: Synthesis, Properties, and Applications

Small Methods ◽  
2021 ◽  
pp. 2001308
Author(s):  
Shuangyi Zhao ◽  
Wensi Cai ◽  
Huaxin Wang ◽  
Zhigang Zang ◽  
Jiangzhao Chen
Keyword(s):  
Single Crystals ◽  
Lead Free ◽  
Inorganic Lead ◽  
Synthesis Properties

Deep ultraviolet photodetector based on pulsed laser deposited Cs3Cu2I5 films/n-Si heterojunction

2021 ◽  
Author(s):  
Li Xiaoxuan ◽  
Lichun Zhang ◽  
Zhou Xiaoyu ◽  
Cheng Wang ◽  
Zhou Zhiying ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Ultraviolet Photodetector ◽  
Deep Ultraviolet

Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

2014 ◽  
Vol 35 (11) ◽  
pp. 1291-1296
Author(s):  
郑剑 ZHENG Jian ◽  
乔倩 QIAO Qian ◽  
张振中 ZHANG Zhen-zhong ◽  
王立昆 WANG Li-kun ◽  
韩舜 HAN Shun ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet

X-Ray Detector Based on All-Inorganic Lead-Free Cs2AgBiBr6 Perovskite Single Crystal

2019 ◽  
Vol 66 (5) ◽  
pp. 2224-2229 ◽  
Author(s):  
Hainan Zhang ◽  
Yi Yang ◽  
Xueyun Wang ◽  
Tian-Ling Ren ◽  
Ziyan Gao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lead Free ◽  
X Ray ◽  
Inorganic Lead
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