scholarly journals Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Level ◽  
Electronic Devices ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Wide Bandgap ◽  
Trap Level ◽  
Characteristic Peak ◽  
Deep Ultraviolet

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.

Pulsed laser deposition of wide-bandgap semiconductor thin films

2003 ◽  
Author(s):  
Donagh O'Mahony ◽  
Eduardo de Posada ◽  
James G. Lunney ◽  
Jean-Paul Mosnier ◽  
Enda McGlynn
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Wide Bandgap ◽  
Laser Deposition ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

Deposition and Properties of Epitaxial Ferrite Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Julia M. Phillips ◽  
R. B. Van Dover ◽  
E. M. Gyorgy ◽  
J. H. Marshall
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Saturation Magnetization ◽  
Spinel Structure ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Ferrite Thin Films

ABSTRACTWe have grown thin films and multilayers of several ferrite materials with the spinel structure by pulsed laser deposition of stoichiometric targets. Epitaxial films can be grown on a variety of substrates including MgO, Al2O3, MgAl2O4, Y-stabilized ZrO2 (YSZ) and SrTiO3. Films on Mg- and Al-containing substrates have a low saturation Magnetization, Ms, while films on YSZ and SrTiO3 exhibit bulk values of Ms. The anisotropy can be lowered by a post growth anneal, resulting in a film with a permeability of 28.

Electronic and transport properties of Li-doped NiO epitaxial thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 2275-2282 ◽  
Author(s):  
J. Y. Zhang ◽  
W. W. Li ◽  
R. L. Z. Hoye ◽  
J. L. MacManus-Driscoll ◽  
M. Budde ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Epitaxial Thin Films ◽  
Wide Bandgap Semiconductor ◽  
Li Doping ◽  
Work Functions ◽  
P Type

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

High-performance CuFe2O4 epitaxial thin films with enhanced ferromagnetic resonance properties

RSC Advances ◽  
2016 ◽  
Vol 6 (102) ◽  
pp. 100108-100114 ◽  
Author(s):  
Ruyi Zhang ◽  
Ming Liu ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Chun-Lin Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
High Performance ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Resonance Properties ◽  
First Time

CuFe2O4 epitaxial films with superior FMR properties compared with bulk material have been successfully fabricated for the first time.

Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition

2021 ◽  
Author(s):  
Yuri Ogura ◽  
Yuta Arata ◽  
Hiroyuki NISHINAKA ◽  
Masahiro YOSHIMOTO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
X Ray Diffraction ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Phase Crystal ◽  
Deep Ultraviolet

Abstract We studied the phase diagram of (In x Ga1−x )2O3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga1−x )2O3 thin films exhibited three different single-phase crystal structures depending on the value of x: orthorhombic (κ)-(In x Ga1−x )2O3 for x ≤ 0.186, hexagonal (hex)-(In x Ga1−x )2O3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga1−x )2O3 for x ≥ 0.772. The optical bandgap of (In x Ga1−x )2O3 was tuned from 3.27 eV (bcc-In2O3) and 4.17 eV (hex-InGaO3) to 5.00 eV (κ-Ga2O3). Moreover, hex-(In x Ga1−x )2O3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4×10‒1 Ω·cm). Furthermore, hex-(In x Ga1−x )2O3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga1−x )2O3 can be used in transparent conductive films for deep-ultraviolet LEDs.

GaAs Surface Passivation by InGaP Thin Film

1991 ◽  
Vol 240 ◽  
Author(s):  
Fumiaki Hyuga ◽  
Tatsuo Aoki ◽  
Suehiro Sugitani ◽  
Kazuyoshi Asai ◽  
Yoshihiro Imamura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Concentration ◽  
High Performance ◽  
Surface Passivation ◽  
Wide Bandgap ◽  
Gaas Surface ◽  
Photoluminescence Intensity ◽  
Barrier Heights ◽  
Wide Bandgap Materials

ABSTRACTInGaP thin films are evaluated as wide-bandgap materials for GaAs surface passivation. A 200-Å InGaP thin film increases GaAs photoluminescence intensity 25-fold and enables Schottky barrier heights of more than 0.6 eV on n-type GaAs layers with a carrier concentration of 3×1018 /cm3. These effects persist after annealing at 800 °C for 10 min. InGaP thin films are thus suitable as surface passivation films for high-performance GaAs-MESFETs.

scholarly journals High-performance ferroelectric non-volatile memory based on La-doped BiFeO3 thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18039-18043
Author(s):  
Wanqiong Dai ◽  
Yuanxiang Li ◽  
Caihong Jia ◽  
Chaoyang Kang ◽  
Mengxin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Performance ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Crystal Substrate ◽  
Bifeo3 Thin Films ◽  
Crystal Substrate ◽  
Non Volatile Memory ◽  
La Doped

An ultrathin (6.2 nm) ferroelectric La0.1Bi0.9FeO3 (LBFO) film was epitaxially grown on a 0.7 wt% Nb-doped SrTiO3 (001) single-crystal substrate by carrying out pulsed laser deposition to form a Pt/La0.1Bi0.9FeO3/Nb-doped SrTiO3 heterostructure.

Thermoelectric properties of epitaxial and topotaxial NaxCoO2 thin films

2005 ◽  
Vol 886 ◽  
Author(s):  
Adyam Venimadhav ◽  
Z Ma ◽  
Qi Li ◽  
A Soukiassian ◽  
X. X. Xi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Vapor Pressures ◽  
Film Properties ◽  
Deposition Parameters

ABSTRACTWe report structural, electrical, and thermopower properties of epitaxial and topotaxial NaxCoO2 thin films on (0001) sapphire substrate. Topotaxial NaxCoO2 films were prepared by converting an epitaxial Co3O4 film to NaxCoO2 by annealing in Na vapor and epitaxial NaxCoO2 films were obtained by pulsed laser deposition. All the films are c-axis oriented. For topotaxial films, annealing in different Na vapor pressures resulted in films with different Na concentrations, which showed distinct transport properties. For directly deposited epitaxial films by pulsed laser deposition, deposition parameters are found to control the Na concentration and hence the film properties. The largest thermoelectric power of the samples made by different methods is found to be similar in the range of 70-100 μV/K at room temperature

scholarly journals Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 782
Author(s):  
Liu Wang ◽  
Wenrui Zhang ◽  
Ningtao Liu ◽  
Tan Zhang ◽  
Zilong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Pulsed Laser Deposition ◽  
High Performance ◽  
Film Growth ◽  
Growth Parameters ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Stoichiometry Control ◽  
Ultraviolet Photodetectors

ZnGa2O4 is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa2O4 growth is a widely recognized problem that seriously degrades the film quality and the device performance. In this study, we report the synthesis of epitaxial ZnGa2O4 thin films by pulsed laser deposition using a non-stoichiometric Zn1+xGa2O4 target. It is found that supplementing excessive Zn concentration from the target is highly effective to stabilize stochiometric ZnGa2O4 thin films during the PLD growth. The influence of various growth parameters on the phase formation, crystallinity and surface morphology is systematically investigated. The film growth behavior further impacts the resulting optical absorption and thermal conductivity. The optimized epitaxial ZnGa2O4 film exhibits a full width at half maximum value of 0.6 degree for a 120 nm thickness, a surface roughness of 0.223 nm, a band gap of 4.79 eV and a room-temperature thermal conductivity of 40.137 W/(m⋅K). This study provides insights into synthesizing epitaxial ZnGa2O4 films for high performance optoelectronic devices.

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