scholarly journals Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

RSC Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 1394-1402 ◽  
Author(s):  
Xu Han ◽  
Shuanglong Feng ◽  
Yiming Zhao ◽  
Lei Li ◽  
Zhaoyao Zhan ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Fourth Generation ◽  
Ternary Oxide ◽  
Uv Photodetector ◽  
Ultraviolet Detection ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nanowire Networks ◽  
Uv C

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.

scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

2019 ◽  
Vol 60 ◽  
pp. 86-93
Author(s):  
Kasif Teker
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Fast Response ◽  
Light Sensitivity ◽  
Image Sensors ◽  
Uv Photodetector ◽  
Low Voltage Operation ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
New Applications

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

Bandgap Engineering of ZrGaO Films for Deep-Ultraviolet Detection

2021 ◽  
pp. 1-1
Author(s):  
Jianmiao Guo ◽  
Minghe Ma ◽  
Yuqiang Li ◽  
Dan Zhang ◽  
Yanghui Liu ◽  
...  
Keyword(s):  
Bandgap Engineering ◽  
Ultraviolet Detection ◽  
Deep Ultraviolet

Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

2021 ◽  
Vol 118 (21) ◽  
pp. 211906
Author(s):  
Dan Zhang ◽  
Wanmin Lin ◽  
Zhuogeng Lin ◽  
Lemin Jia ◽  
Wei Zheng ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Deep Uv

Growth and theoretical study on the deep-ultraviolet transparent β-CsBa2(PO3)5 nonlinear optical crystal

CrystEngComm ◽  
2019 ◽  
Vol 21 (32) ◽  
pp. 4690-4695 ◽  
Author(s):  
Yang Zhong ◽  
Pai Shan ◽  
Tongqing Sun ◽  
Zhenpeng Hu ◽  
Hongde Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Nonlinear Optical ◽  
Theoretical Study ◽  
Nonlinear Optical Crystal ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Optical Crystal

A single crystal of β-CsBa2(PO3)5 has been successfully grown, and it exhibits a remarkable deep-UV cutoff edge of 168 nm.

scholarly journals Improved Photoresponse Characteristics of a ZnO-Based UV Photodetector by the Formation of an Amorphous SnO2 Shell Layer

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6124
Author(s):  
Junhyuk Yoo ◽  
Uijin Jung ◽  
Bomseumin Jung ◽  
Wenhu Shen ◽  
Jinsub Park
Keyword(s):  
Shell Structure ◽  
Rise Time ◽  
Zno Nanorods ◽  
Wide Bandgap ◽  
Core Shell ◽  
Shell Layer ◽  
Slow Response ◽  
Uv Photodetector ◽  
Zno Nanostructure ◽  
Core Shell Structure

Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO2 (a-SnO2) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO2 NRs core–shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO/SnO2 NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO2 shell layer. With a wide bandgap (~4.5 eV), the a-SnO2 shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO2-coated ZnO core–shell structure qualifies as a candidate for ZnO-based PDs.

scholarly journals Low-noise tunable deep-ultraviolet supercontinuum laser

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Callum R. Smith ◽  
Asbjørn Moltke ◽  
Abubakar I. Adamu ◽  
Mattia Michieletto ◽  
Patrick Bowen ◽  
...  
Keyword(s):  
Spectral Region ◽  
Tunable Laser ◽  
Low Noise ◽  
Laser Source ◽  
Efficient Energy Transfer ◽  
Significant Step ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nonlinear Compression

Abstract The realization of a table-top tunable deep-ultraviolet (UV) laser source with excellent noise properties would significantly benefit the scientific community, particularly within imaging and spectroscopic applications, where source noise has a crucial role. Here we provide a thorough characterization of the pulse-to-pulse relative intensity noise (RIN) of such a deep-UV source based on an argon (Ar)-filled anti-resonant hollow-core (AR HC) fiber. Suitable pump pulses are produced using a compact commercially available laser centered at 1030 nm with a pulse duration of 400 fs, followed by a nonlinear compression stage that generates pulses with 30 fs duration, 24.2 μJ energy at 100 kHz repetition rate and a RIN of < 1%. Pump pulses coupled into the AR HC fiber undergo extreme spectral broadening creating a supercontinuum, leading to efficient energy transfer to a phase-matched resonant dispersive wave (RDW) in the deep-UV spectral region. The center wavelength of the RDW could be tuned between 236 and 377 nm by adjusting the Ar pressure in a 140 mm length of fiber. Under optimal pump conditions the RIN properties were demonstrated to be exceptionally good, with a value as low as 1.9% at ~ 282 nm. The RIN is resolved spectrally for the pump pulses, the generated RDW and the broadband supercontinuum. These results constitute the first broadband RIN characterization of such a deep-UV source and provide a significant step forward towards a stable, compact and tunable laser source for applications in the deep-UV spectral region.

Highly sensitive and ultrafast deep UV photodetector based on aβ-Ga2O3nanowire network grown by CVD

2016 ◽  
Vol 49 (42) ◽  
pp. 425105 ◽  
Author(s):  
Jianyu Du ◽  
Jie Xing ◽  
Chen Ge ◽  
Hao Liu ◽  
Pengyu Liu ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Highly Sensitive ◽  
Deep Uv
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