scholarly journals Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28326-28331
Author(s):  
Yutong Wu ◽  
Shuanglong Feng ◽  
Miaomiao Zhang ◽  
Shuai Kang ◽  
Kun Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gallium Oxide ◽  
Wide Bandgap ◽  
Radiation Wavelength ◽  
Wide Bandgap Semiconductor ◽  
Ideal Candidate ◽  
Deep Ultraviolet ◽  
Nanowire Networks ◽  
Ultraviolet Photodetectors ◽  
Excellent Chemical

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

scholarly journals Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

RSC Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 1394-1402 ◽  
Author(s):  
Xu Han ◽  
Shuanglong Feng ◽  
Yiming Zhao ◽  
Lei Li ◽  
Zhaoyao Zhan ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Fourth Generation ◽  
Ternary Oxide ◽  
Uv Photodetector ◽  
Ultraviolet Detection ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nanowire Networks ◽  
Uv C

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.

scholarly journals Zinc Gallium Oxide—A Review from Synthesis to Applications

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2208
Author(s):  
Mu-I Chen ◽  
Anoop Kumar Singh ◽  
Jung-Lung Chiang ◽  
Ray-Hua Horng ◽  
Dong-Sing Wuu
Keyword(s):  
Wide Bandgap ◽  
Research Progress ◽  
Bulk Crystal Growth ◽  
Mechanical And Electrical Properties ◽  
Device Processing ◽  
Recent Trends ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors ◽  
Zinc Gallium Oxide ◽  
Significant Attention

Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa2O4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.

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