Raman spectroscopy of carbon nitride films deposited using the filtered cathodic vacuum-arc technique combined with a radio-frequency nitrogen-ion beam

2001 ◽  
Vol 73 (3) ◽  
pp. 341-345 ◽  
Author(s):  
Y.H. Cheng ◽  
B.K. Tay ◽  
S.P. Lau ◽  
X. Shi ◽  
X.L. Qiao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Radio Frequency ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Nitrogen Ion ◽  
Filtered Cathodic Vacuum Arc

Deposition of carbon nitride films by filtered cathodic vacuum arc combined with radio frequency ion beam source

2000 ◽  
Vol 9 (12) ◽  
pp. 2010-2018 ◽  
Author(s):  
Y.H Cheng ◽  
B.K Tay ◽  
S.P Lau ◽  
X Shi ◽  
H.C Chua ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Beam Source ◽  
Filtered Cathodic Vacuum Arc

Synthesis of Superhard and Elastic Carbon Nitride Films by Filtered Cathodic Vacuum arc Combined with Radio Frequency Ion Beam Source

2002 ◽  
Vol 17 (3) ◽  
pp. 521-524 ◽  
Author(s):  
Y. H. Cheng ◽  
B. K. Tay ◽  
S. P. Lau ◽  
X. Shi ◽  
X. L. Qiao ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Elastic Recovery ◽  
Ion Beam ◽  
Film Surface ◽  
Membered Ring ◽  
Vacuum Arc ◽  
Nitride Film ◽  
Beam Source ◽  
Filtered Cathodic Vacuum Arc

Superhard and elastic carbon nitride films with hardness and elastic recovery of 47 GPa and 87.5%, respectively, were synthesized by using a double-bend filtered cathodic vacuum arc combined with radio-frequency nitrogen ion beam source. The bombardment of energetic nitrogen atom onto the growing film surface results in the high atomic ratio of N/C (0.4), which contributes to the high sp2 content and the formation of a five-membered ring structure in the carbon nitride film at room temperature. The buckling of the five-membered ring basal planes may facilitate cross-linking between the planes through sp3 coordinated carbon atoms. A rigid three-dimensional network is formed, which contributes to the high hardness and elastic recovery of the deposited films.

Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

1995 ◽  
Vol 396 ◽  
Author(s):  
Imad F. Husein ◽  
Yuanzhong Zhou ◽  
Chung Chan ◽  
Jacob I. Kleiman ◽  
Yu Gudimenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Si Substrates ◽  
Thin Carbon ◽  
Nitrogen Ion ◽  
Nitrogen Bonds

AbstractCarbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Micromechanical properties of carbon nitride films deposited by radio-frequency-assisted filtered cathodic vacuum arc

2002 ◽  
Vol 75 (3) ◽  
pp. 375-380 ◽  
Author(s):  
Y.H. Cheng ◽  
B.K. Tay ◽  
S.P. Lau ◽  
X.L. Qiao ◽  
J.G. Chen ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Nitride ◽  
Vacuum Arc ◽  
Micromechanical Properties ◽  
Filtered Cathodic Vacuum Arc

Filtered Cathodic Arc Deposited Diamond-Like Carbon: Electron Spin Resonance (ESR) and Raman Spectroscopy

1999 ◽  
Vol 593 ◽  
Author(s):  
B. Druz ◽  
I. Zaritskiy ◽  
Y. Yevtukhov ◽  
A. Konchits ◽  
M. Valakh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Ion Beam ◽  
Vacuum Arc ◽  
Diamond Like Carbon ◽  
Si Substrates ◽  
Spin Resonance ◽  
Filtered Cathodic Vacuum Arc ◽  
Cathodic Arc ◽  
Deposited Films

ABSTRACTTetrahedral diamond like carbon (ta-C) films were deposited onto Si substrates using Filtered Cathodic Vacuum Arc (FCVA) process. Stress of deposited films was varied in the range 3.5÷8.5 GPa. The ESR (stationary and pulse) and Raman techniques were used to analyze sp2 related defects in the pseudo-gap of undoped, as deposited 20 – 100 nm thick films. The results are compared with data for direct ion beam deposited from CH4 plasma hydrogenated DLHC films and nature of paramagnetic defects in DLC is discussed.

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

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