Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

1995 ◽  
Vol 396 ◽  
Author(s):  
Imad F. Husein ◽  
Yuanzhong Zhou ◽  
Chung Chan ◽  
Jacob I. Kleiman ◽  
Yu Gudimenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Si Substrates ◽  
Thin Carbon ◽  
Nitrogen Ion ◽  
Nitrogen Bonds

AbstractCarbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Nitrogen Plasma Ion Implantation into Carbon Films Deposited by the Anodic Vacuum ARc

1995 ◽  
Vol 388 ◽  
Author(s):  
Imad F. Husein ◽  
Fan Li ◽  
Yuanzhong Zhou ◽  
Ryne C. Allen ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Carbon Nitride ◽  
Nitrogen Plasma ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Si Substrates ◽  
Plasma Immersion Ion Implantation ◽  
Nitrogen Bond

AbstractAmorphous carbon films (a-C) deposited by the anodic vacuum arc on Si substrates were implanted with nitrogen using the Plasma Immersion Ion Implantation (PIII) technique to form carbon nitride films (CNX). Scanning Electron Microscopy (SEM) of the a-C films show a surface morphology with maximum grain size in the order of a few nanometers and the exclusion of macroparticles. INcreasing the nitrogen content of the CNX films increased the intensity of the X-ray Photoelecton Spectroscopy (XPS) C Is peak at 286.6 eV and formed a new peak at 285.6 eV which both can be associated with the carbon-nitrogen bond formation. Nanoindentaiton measurements showed that the hardness of the a-C films increased after implanting nitrogen into them. these CNX films exhibited a hardness of 19 GP A.

Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

2005 ◽  
Vol 908 ◽  
Author(s):  
Eiji Iwamura ◽  
Tatsuhiko Aizawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Film Surface ◽  
Carbon Films ◽  
Implantation Technique ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

AbstractFabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

COMPARISON OF WEAR RESISTANCE MECHANISMS OF DIE STEEL IMPLANTED WITH C AND Mo IONS

2007 ◽  
Vol 14 (03) ◽  
pp. 517-520
Author(s):  
M. F. CHENG ◽  
J. H. YANG ◽  
X. D. LUO ◽  
T. H. ZHANG
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
Resistance Mechanisms ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Die Steel ◽  
X Ray

Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017 cm -2 due to formation of a modification layer of little oxidation with Mo 2 C in the implanted surface.

Depth profiling of the C/Si interface

1993 ◽  
Vol 71 (11-12) ◽  
pp. 578-581
Author(s):  
D. M. Danailov ◽  
V. Miteva ◽  
U. Littmark
Keyword(s):  
Monte Carlo ◽  
Ion Beam ◽  
Depth Profiling ◽  
Computer Code ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Thin Carbon ◽  
Beam Stability ◽  
Different Temperatures ◽  
Primary Ions

Auger profiles analysis is performed on thin carbon films deposited on silicon substrates (a-C:D/Si) using a 5 keV Xe+-ion beam. Stability of the interface is observed after annealing at different temperatures. The profiling is modeled by means of a Monte-Carlo dynamic computer code. A comparison is made of the mixing of the layers for profiling with different primary ions: the heavy Xe+ and the commonly-used Ar+.

scholarly journals Verification Study of Nanostructure Evolution with Heating Treatment between Thin and Thick Fullerene-Like Hydrogen Carbon Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 82 ◽  
Author(s):  
Zhaolong Wang ◽  
Kaixiong Gao ◽  
Bin Zhang ◽  
Zhenbin Gong ◽  
Xiaoli Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Thick Films ◽  
Carbon Films ◽  
Good Choice ◽  
Xps Spectra ◽  
Si Substrates ◽  
Transmission Electron ◽  
Original Films ◽  
Heating Treatment

Fullerene-like hydrogen carbon films with a thin film grown on a NaCl substrate are usually employed to show the nanostructure of films (usually of hundred nanometers thick grown on Si substrates) under high resolution transmission electron microscopy (HRTEM) tests because it is easier floated off, where dependability and reasonability has never been seriously contested. Thus, in this paper, thin and thick hydrogen carbon films have been deposited on NaCl (thin films) and Si (thick films) substrates and annealed under room temperature to 500 °C, of which nanostructures have been investigated by HRTEM, Raman spectroscopy, and X-ray photoelectron spectroscopy, to verify the dependability and reasonability of the NaCl method. The results showed heating induced graphitization but with hydrogen content nearly unchanged. HRTEM results revealed that under annealing of 200, 250, and 300 °C, the curved graphene structures gradually increase in films. However, beyond 400 °C, onions structures are present. However, both Raman and XPS spectra show us that after annealed treatment, for original films, both thin and thick films have the near sp2 bonding content and size, but with the annealing temperature increase, sp2 bonding content increases more quickly for thick FL-C:H films due to the higher internal stress compared to thin films. In one word, the NaCl method used for nanostructure detection for films might be a good choice for an easier and quicker analysis, but it is still insufficient, because the heating effect induced by plasma cannot be ignored.

scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Defect Density ◽  
Epitaxial Graphene ◽  
Monolayer Graphene ◽  
Vacancy Defects ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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